Compact Gate Drivers with Increased Creepage Distance
Infineon Technologies AGis adding a number of wide body package options to its EiceDRIVER™ Compact family of galvanically isolated gate driver ICs. The new 1EDI Compact 300 mil devices are supplied in a DSO-8 300 mil package offering increased creepage distances and improved thermal behavior. Featuring a creepage distance of 8 mm, the new ICs have an input-to-output isolation voltage of 1200V. They are designed to drive high-voltage power MOSFETs and IGBTs. Target applications include general-purpose and photovoltaic inverters, industrial drives, charging stations for electric vehicles, welding equipment, and commercial and agricultural vehicles.
An optimized pin-out simplifies PCB design for low-impedance power supplies. As with other members of Infineon’s EiceDRIVER family, 1EDI Compact 300-mil drivers are based on the company’s coreless transformer technology. The latest driver ICs enable output currents of up to 6A.
The ICs deliver drive currents on separate sink and source output pins of 0.5A (1EDI05I12AH), 2A (1EDI20I12AH), 4A (1EDI40I12AH) and 6A (1EDI60I12AH) respectively. Typical propagation delay for these devices is 300ns. For higher speed applications, the 1EDI20H12AH and 1EDI60H12AH have a reduced propagation delay of just 120ns, an excellent fit for today’s up and coming SiC-MOSFET based applications. Three further variants (1EDI10I12MH, 1EDI20I12MH and 1EDI30I12MH) feature an integrated Miller clamp and provide respective output currents of 1A, 2A and 3A.
Volume production of the 1EDI Compact 300-mil gate driver ICs is planned for June 2016. Engineering samples and evaluation boards are available now.
