APT Intros POWER MOS 7 High-Power MOSFETs

Advanced Power Technology Inc. (APT, Bend, OR) announced its new generation of high-voltage MOSFETs, POWER MOS 7®, which are now available in hermetic, discrete packages. The POWER MOS 7® MOSFETs have up to 60% lower total gate charge (Qg) than the current POWER MOS V® generation devices. In addition, the POWER MOS 7® devices have up to a 30% reduction in on-resistance resulting in up to a 20% increase in maximum current-carrying capacity. The new devices offer a low combined power loss figure of merit, RDS(on) x Qg, enabling smaller, more efficient and more reliable power conversion.

Applications include dc/dc converters, power-factor correction pre-regulators, switch-mode power supplies, motor controls, and inverters used in aerospace and military applications. Parts are available with and without Mil-PRF-19500 type screening. Utilizing APT's patented metal-on-polysilicon gate structure, the internal chip gate resistance is one or two orders of magnitude lower than comparable industry-standard polysilicon gate devices. This, combined with lower capacitances, Qg and RDS(on), makes these MOS 7® devices extremely fast switching as well as having lower conduction losses.

Limited samples are available now with volume production also available. Small-volume pricing of 500 pieces ranges from $61.86 to $83.60.