800V Super Junction N-Channel FETs with 79% Lower RON x A
Toshiba Corporation's Storage & Electronic Devices Solutions Company today announced the launch of 800V super junction N-channel power MOSFETs for high efficiency power supplies with improved low on-resistance and high speed switching. By utilizing the super junction structure, the eight new MOSFETs of the "DTMOS IV series" achieve approximately 79% reduction in on-resistance per area (RON x A) compared to Toshiba's previous "π-MOSVIII series."
Its improved high speed switching can also contribute to the efficiency of the power supplies of the sets that it is used in. The MOSFETs are suited for use in industrial power supplies, standby power supply for servers, adaptors and chargers of noteook PCs and mobile devices, and in power supplies for LED lighting. Shipments start from today.
The first devices released are offered with four variations on performance specifications: Id = 17A, RDS(on) = 0.29 Ω, Qg = 32nC, and Ciss = 2050pF; Id = 11.5A, RDS(on) = 0.45Ω, Qg = 23nC, and Ciss = 1400pF; Id = 9.5A, RDS(on) = 0.55Ω, Qg = 19nC, and Ciss = 1150pF; and Id = 6.5A, RDS(on) = 0.95Ω, Qg = 13nC, and Ciss = 700pF. Each of the four sets of electrical specifications are offered in a choice of TO-220SIS or TO-220 packages, hence the introduction of eight part numbers.
