Texas Instruments recently introduced several new isolated gate drivers that provide unparalleled levels of monitoring…
Texas Instruments recently introduced several new isolated gate drivers that provide unparalleled levels of monitoring and protection for high-voltage
Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum RDS(on) of 13.5mΩ and a…
Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum RDS(on) of 13.5mΩ and a 74 A pulsed output current for
Transphorm Inc.—the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101…
Transphorm Inc.—the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified 650 V gallium…
GaN Systems announced the availability of the GS-065 low current transistor line.
GaN Systems announced the availability of the GS-065 low current transistor line.
This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source…
This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source pin for fast SiC MOSFETs.
Hans Keller joins Höganäs as President Product Area Surface & Joining Technologies on 1 March 2019.
Hans Keller joins Höganäs as President Product Area Surface & Joining Technologies on 1 March 2019.
Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today…
Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced the SIC1182K…
JEDEC announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power…
JEDEC announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices
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