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GaN Systems Pens Exclusive Worldwide Deal with Mouser Electronics

GaN Systems Pens Exclusive Worldwide Deal with Mouser Electronics


News Sep 03, 2014 by Jeff Shepard
EPC Experts to Present Benchmark Performance with GaN at DES

EPC Experts to Present Benchmark Performance with GaN at DES

Toshiba Promises both SiC and GaN Power Devices

Toshiba Promises both SiC and GaN Power Devices


News Aug 27, 2014 by Jeff Shepard
Where Does SiC Fit?

Where Does SiC Fit?


News Aug 26, 2014 by Jeff Shepard
Ammono Lowers GaN Substrate Prices for Little Box Challenge

Ammono Lowers GaN Substrate Prices for Little Box Challenge


News Aug 24, 2014 by Jeff Shepard
You can Join the GaN Power Roundtable Discussion

You can Join the GaN Power Roundtable Discussion


News Aug 11, 2014 by Jeff Shepard
University of Tokyo Team Improves SiC Power Devices

University of Tokyo Team Improves SiC Power Devices


News Aug 07, 2014 by Jeff Shepard
Energy Harvesting, GaN Power and DC Microgrids at Darnell’s Energy Summit

Energy Harvesting, GaN Power and DC Microgrids at Darnell’s Energy Summit


News Aug 05, 2014 by Jeff Shepard
High-temperature SiC for Aerospace Power Conversion

High-temperature SiC for Aerospace Power Conversion


News Jul 30, 2014 by Jeff Shepard
Driver Integrated GaN Transistors Announced by Sanken

Driver Integrated GaN Transistors Announced by Sanken

Transphorm Demonstrates GaN Progress at Techno Frontier

Transphorm Demonstrates GaN Progress at Techno Frontier

10A and 20A Silicon Carbide Schottky Diodes

10A and 20A Silicon Carbide Schottky Diodes

A4WP-Compliant 35W Wireless Power Transfer with GaN

A4WP-Compliant 35W Wireless Power Transfer with GaN

GaN Widens the Performance Gap with the Silicon MOSFETs

GaN Widens the Performance Gap with the Silicon MOSFETs

German Researchers use SiC and GaN to Cut Energy Loss in Half

German Researchers use SiC and GaN to Cut Energy Loss in Half


News Jun 30, 2014 by Jeff Shepard
Wireless Power Demo Boards Operate at 6.78 MHz with GaN FETs

Wireless Power Demo Boards Operate at 6.78 MHz with GaN FETs

Move expands GaN Systems’ Headquarters Size by 3X

Move expands GaN Systems’ Headquarters Size by 3X


News Jun 24, 2014 by Jeff Shepard
Fifth-Generation 1200V SiC Schottky Diodes

Fifth-Generation 1200V SiC Schottky Diodes

AlN / GaN / GaAs / SiC Power Semis plus Smart Materials and the Smart Grid

AlN / GaN / GaAs / SiC Power Semis plus Smart Materials and the Smart Grid


News Jun 15, 2014 by Jeff Shepard
Fraunhofer ISE uses Cree 10kV SiC Devices in Experimental DC-DC

Fraunhofer ISE uses Cree 10kV SiC Devices in Experimental DC-DC


News Jun 04, 2014 by Jeff Shepard