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SiC Reduces Size of Railroad Battery Charger by 10X

SiC Reduces Size of Railroad Battery Charger by 10X


News Sep 15, 2016 by Jeff Shepard
GaN Enhances Efficiency of Redundant Power Supplies

GaN Enhances Efficiency of Redundant Power Supplies

6-Watt DC-DCs for IGBT, SiC, and MOSFET Gate Drives

6-Watt DC-DCs for IGBT, SiC, and MOSFET Gate Drives

SiC FETs Shrink 5kW Rack-Mounted Distributed UPS

SiC FETs Shrink 5kW Rack-Mounted Distributed UPS

0.080-Ohm 12A / 650V GaN Switches

0.080-Ohm 12A / 650V GaN Switches

220W GaN HEMT for 2.6GHz 4G Transceivers

220W GaN HEMT for 2.6GHz 4G Transceivers

Documenting GaN Technology Reliability after Millions of Device Hours of Rigorous Stress Testing

Documenting GaN Technology Reliability after Millions of Device Hours of Rigorous Stress Testing

This article introduces the release of EPC's Phase Eight Reliability Report showing the results of qualification stress tests of eGaN FETs and…


new products Sep 03, 2016 by EPC
GaN Systems’ Founders Girvan Patterson and John Roberts to Retire

GaN Systems’ Founders Girvan Patterson and John Roberts to Retire


News Aug 25, 2016 by Jeff Shepard
Dialog Semi Enters GaN Power IC Market

Dialog Semi Enters GaN Power IC Market


News Aug 24, 2016 by Jeff Shepard
IPM with SiC Boost Diode for 150kHz Operation

IPM with SiC Boost Diode for 150kHz Operation

Mitsubishi Launches Super-mini Full SiC DIPIPM

Mitsubishi Launches Super-mini Full SiC DIPIPM

1-GHz Optically-Isolated Measurements for GaN and SiC

1-GHz Optically-Isolated Measurements for GaN and SiC

GaN Powers Next-Generation Missile Defense

GaN Powers Next-Generation Missile Defense


News Aug 15, 2016 by Jeff Shepard
Increasing Reliability Data for GaN Devices

Increasing Reliability Data for GaN Devices

New Material may Exceed GaN Performance

New Material may Exceed GaN Performance


News Jul 28, 2016 by Jeff Shepard
Gate Drivers for IGBTs and SiC MOSFETs

Gate Drivers for IGBTs and SiC MOSFETs

Taiyo Yuden gets GE IP for Si, SiC and GaN Embedded Circuits

Taiyo Yuden gets GE IP for Si, SiC and GaN Embedded Circuits


News Jul 27, 2016 by Jeff Shepard
LinPak, the Standard Expands to 3300V and Shows Excellent Parallel Operation as well as SiC Readiness

LinPak, the Standard Expands to 3300V and Shows Excellent Parallel Operation as well as SiC Readiness

This article presents general module design considerations and first results on switching characteristics of LinPaks in different configurations.


EPC taps Ismosys to Support Accelerating European GaN Growth

EPC taps Ismosys to Support Accelerating European GaN Growth


News Jul 25, 2016 by Jeff Shepard
Kettering tapped to Develop SiC EV Charger for PowerAmerica

Kettering tapped to Develop SiC EV Charger for PowerAmerica


News Jul 20, 2016 by Jeff Shepard