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ROHM Introduces SiC Technology into Formula E

ROHM Introduces SiC Technology into Formula E


News Oct 10, 2016 by Jeff Shepard
AgileSwitch to be Awarded Patent for SiC Module Switching

AgileSwitch to be Awarded Patent for SiC Module Switching


News Oct 09, 2016 by Jeff Shepard
X-FAB to Provide High-Volume 6-Inch SiC Foundry

X-FAB to Provide High-Volume 6-Inch SiC Foundry


News Oct 09, 2016 by Jeff Shepard
1000V / 65mOhm SiC MOSFET

1000V / 65mOhm SiC MOSFET

Wide Bandgap Now

Wide Bandgap Now

Five years ago, in this column, I wrote an editorial entitled, “When Wide Bandgap?”  In that piece, I predicted, “The key to success in silicon


tech insights Oct 03, 2016 by Dan Kinzer
Silicon Carbide Reduces EV Inverter Losses by Two-Thirds

Silicon Carbide Reduces EV Inverter Losses by Two-Thirds


News Sep 29, 2016 by Jeff Shepard
High-Isolation SiC Gate Drivers

High-Isolation SiC Gate Drivers

59-mOhm 1200V SiC MOSFET Rated for 65 Amps

59-mOhm 1200V SiC MOSFET Rated for 65 Amps

e2v and GaN Systems Sign Master Supply Agreement for A&D Markets

e2v and GaN Systems Sign Master Supply Agreement for A&D Markets


News Sep 26, 2016 by Jeff Shepard
Full SiC 1500V PV Inverters are 99% Efficient

Full SiC 1500V PV Inverters are 99% Efficient

Highest Power L-Band Radar GaN HEMT

Highest Power L-Band Radar GaN HEMT

1200V / 0.04Ω GaN Switches with integral ISO-DRIVER

1200V / 0.04Ω GaN Switches with integral ISO-DRIVER

SiC Reduces Size of Railroad Battery Charger by 10X

SiC Reduces Size of Railroad Battery Charger by 10X


News Sep 15, 2016 by Jeff Shepard
GaN Enhances Efficiency of Redundant Power Supplies

GaN Enhances Efficiency of Redundant Power Supplies

6-Watt DC-DCs for IGBT, SiC, and MOSFET Gate Drives

6-Watt DC-DCs for IGBT, SiC, and MOSFET Gate Drives

SiC FETs Shrink 5kW Rack-Mounted Distributed UPS

SiC FETs Shrink 5kW Rack-Mounted Distributed UPS

0.080-Ohm 12A / 650V GaN Switches

0.080-Ohm 12A / 650V GaN Switches

220W GaN HEMT for 2.6GHz 4G Transceivers

220W GaN HEMT for 2.6GHz 4G Transceivers

Documenting GaN Technology Reliability after Millions of Device Hours of Rigorous Stress Testing

Documenting GaN Technology Reliability after Millions of Device Hours of Rigorous Stress Testing

This article introduces the release of EPC's Phase Eight Reliability Report showing the results of qualification stress tests of eGaN FETs and…


new products Sep 03, 2016 by EPC
GaN Systems’ Founders Girvan Patterson and John Roberts to Retire

GaN Systems’ Founders Girvan Patterson and John Roberts to Retire


News Aug 25, 2016 by Jeff Shepard