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650V SiC Schottky Improves Performance in High-power Industrial Applications

650V SiC Schottky Improves Performance in High-power Industrial Applications

new products Oct 14, 2013 by Jeff Shepard
Silicon Labs Claims most Energy-Friendly MCUs Based on the ARM Cortex-M0+ Core

Silicon Labs Claims most Energy-Friendly MCUs Based on the ARM Cortex-M0+ Core

new products Oct 08, 2013 by Jeff Shepard
GaN Systems appoints Vqdot as Applications Development Partner

GaN Systems appoints Vqdot as Applications Development Partner

News Oct 07, 2013 by Jeff Shepard
EPC Dev. Board Features Optimal Layout of Paralleled GaN FETs for Higher Currents

EPC Dev. Board Features Optimal Layout of Paralleled GaN FETs for Higher Currents

new products Oct 02, 2013 by Jeff Shepard
High-Side, High-Frequency FET Gate Driver Features -55°C to 150°C Operation

High-Side, High-Frequency FET Gate Driver Features -55°C to 150°C Operation

new products Sep 30, 2013 by Jeff Shepard
Showa Denko to launch 6-inch SiC Epitaxial Wafers for Power Devices

Showa Denko to launch 6-inch SiC Epitaxial Wafers for Power Devices

News Sep 29, 2013 by Jeff Shepard
85V Half-Bridge FET Driver features Bootstrap Diode and Programmable Gate Drive

85V Half-Bridge FET Driver features Bootstrap Diode and Programmable Gate Drive

new products Sep 29, 2013 by Jeff Shepard
GaN-Resonant Project Launched by BMBF with 1.2 Million Euro Funding

GaN-Resonant Project Launched by BMBF with 1.2 Million Euro Funding

News Sep 25, 2013 by Jeff Shepard
EPC Blurs the Line Between Power and RF Transistors with new Multi-GHz GaN Devices

EPC Blurs the Line Between Power and RF Transistors with new Multi-GHz GaN Devices

new products Sep 24, 2013 by Jeff Shepard
Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

new products Sep 24, 2013 by Jeff Shepard
RFMD Claims World’s First 6-Inch GaN-on-SiC Wafers for RF Power Transistors

RFMD Claims World’s First 6-Inch GaN-on-SiC Wafers for RF Power Transistors

News Sep 18, 2013 by Jeff Shepard
80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

new products Sep 18, 2013 by Jeff Shepard
Toshiba Expands Family of SiC Schottky Barrier Diodes

Toshiba Expands Family of SiC Schottky Barrier Diodes

new products Sep 18, 2013 by Jeff Shepard
EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

new products Sep 12, 2013 by Jeff Shepard
APEI-lead Team Developing SiC and GaN Traction Drive Systems

APEI-lead Team Developing SiC and GaN Traction Drive Systems

News Sep 08, 2013 by Jeff Shepard
Imec and Veeco to Collaborate on Production of GaN-on-Si Devices

Imec and Veeco to Collaborate on Production of GaN-on-Si Devices

News Sep 02, 2013 by Jeff Shepard
Improved Tandem Diodes from STMicro Offered as Economical Alternative to SiC

Improved Tandem Diodes from STMicro Offered as Economical Alternative to SiC

new products Sep 02, 2013 by Jeff Shepard
IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

new products Aug 26, 2013 by Jeff Shepard
Best Player in Chess History is an Ambassador for Nordic Semiconductor

Best Player in Chess History is an Ambassador for Nordic Semiconductor

News Aug 12, 2013 by Jeff Shepard
3 Days of GaN, SiC and GaAs Power Semis at DPF ‘13

3 Days of GaN, SiC and GaAs Power Semis at DPF ‘13

News Aug 11, 2013 by Jeff Shepard