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MOSFET H-bridge Reduces Footprint by 50%

MOSFET H-bridge Reduces Footprint by 50%

Dual 1.5A MOSFET Gate Drivers now in DFN Package

Dual 1.5A MOSFET Gate Drivers now in DFN Package

EPC extends Range of GaN Power Transistors to 450V

EPC extends Range of GaN Power Transistors to 450V

Choices between SiC, GaN and Si Forecast to Get more Difficult

Choices between SiC, GaN and Si Forecast to Get more Difficult

GaN Gate Injection Transistors moving toward Commercialization

GaN Gate Injection Transistors moving toward Commercialization

SiC projected to have Significant Impact on Industrial Markets

SiC projected to have Significant Impact on Industrial Markets

Designing with 1200V SiC MOSFETs

Designing with 1200V SiC MOSFETs


News Jan 06, 2015 by Jeff Shepard
40V 0.99mOhm MOSFET in a DFN5x6 Package

40V 0.99mOhm MOSFET in a DFN5x6 Package

Automated Acoustic Inspection for IGBT Modules

Automated Acoustic Inspection for IGBT Modules

This article discusses the non-destructive inspecting of IGBT modules for internal structural defects such as voids, non-bonds, delamination and…


Chip-Scale Bi-directional MOSFET Enables Higher-Capacity Li Batteries

Chip-Scale Bi-directional MOSFET Enables Higher-Capacity Li Batteries

Commercialization of High Voltage GaN

Commercialization of High Voltage GaN


News Dec 14, 2014 by Jeff Shepard
25V FET in 4x5 PQFN Power Block Package for DC-DC Applications

25V FET in 4x5 PQFN Power Block Package for DC-DC Applications

SBE and Infineon Collaborate on Optimized DC Link for 6 Pack IGBT Module

SBE and Infineon Collaborate on Optimized DC Link for 6 Pack IGBT Module

LLC Resonant Converter Simulation Using PLECS

LLC Resonant Converter Simulation Using PLECS

This article discusses simulation of resonant LLC converter using PLECS that permits analysis of transient effects from multiple physical domains.


Enhanced Trench IGBTs and Field Charge Controlled Diode: The Next Leap in IGBT and Diode Performance

Enhanced Trench IGBTs and Field Charge Controlled Diode: The Next Leap in IGBT and Diode Performance

This article discusses the future generation of IGBT modules which will employ Enhanced Trench ET-IGBTs and Field Charge Extraction and their…


eGaN Technology Transforming the Future

eGaN Technology Transforming the Future

This article discusses the potential of eGaN technology in various applications such as outer space, machine interface, electricity and medicine.


Developments in the AC-DC External Power Supply Market

Developments in the AC-DC External Power Supply Market

Led by a number of traditional applications within the communications, computers and consumer segments as well as a number of emerging…


December 2014 Electronics Industry Digest

December 2014 Electronics Industry Digest

Makers and startups, not tech providers, consumer goods companies or enterprises, will drive acceptance, use and growth in the Internet of Things…


GaN Systems names Daitron to Lead Distribution in Japan and Korea

GaN Systems names Daitron to Lead Distribution in Japan and Korea


News Dec 02, 2014 by Jeff Shepard
MOSFET Gate Drivers Boosts Conversion Efficiency

MOSFET Gate Drivers Boosts Conversion Efficiency