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More Power and Higher Reliability by 7th Generation IGBT Module with New SLC Technology

More Power and Higher Reliability by 7th Generation IGBT Module with New SLC Technology

This article highlights Mitsubishi Electric Corporation SLC package technology is combined with the 7th Gen Chip in the NX-type IGBT Modules Series.


New Ways to Produce Fast Power Thyristors

New Ways to Produce Fast Power Thyristors

This article covers methods utilized at manufacturing of fast power thyristors by means of low-temperature junction of silicon chips with…


Numerical Modeling in Design  for Reliability of Power Modules

Numerical Modeling in Design for Reliability of Power Modules

This article sums up relevant failure modes as well as their causes and explains how numerical modelling can support design processes of development.


SMT Hybrid Packaging 2015 How to Package Future Power Components

SMT Hybrid Packaging 2015 How to Package Future Power Components

This article discusses the Surface Mount Technology Hybrid Packaging 2015, an exhibition aimed to inform visitors about the latest trends in…


GaN Systems signs Shenzhen-based Distribution Partner

GaN Systems signs Shenzhen-based Distribution Partner


News Jul 29, 2015 by Jeff Shepard
MIT Spinout enters GaN Power Race

MIT Spinout enters GaN Power Race

Packaging Layout improves FET Thermal Performance

Packaging Layout improves FET Thermal Performance

ADI joins Trustworthy and Secure Semiconductor Initiative

ADI joins Trustworthy and Secure Semiconductor Initiative


News Jul 19, 2015 by Jeff Shepard
200mm Diameter SiC Wafers Revealed

200mm Diameter SiC Wafers Revealed


News Jul 16, 2015 by Jeff Shepard
Tabuchi Electric Enters US Market with SiC PV Inverter

Tabuchi Electric Enters US Market with SiC PV Inverter

GaN Power Integrated Circuit for Wireless Power Transfer

GaN Power Integrated Circuit for Wireless Power Transfer

Compound Semiconductor Commercialization in Wales

Compound Semiconductor Commercialization in Wales


News Jul 09, 2015 by Jeff Shepard
Cree aims to Disrupt SiC Market with APEI Acquisition

Cree aims to Disrupt SiC Market with APEI Acquisition


News Jul 09, 2015 by Jeff Shepard
Replacement of Electromechanical Relays

Replacement of Electromechanical Relays

Infineon Technologies AG rolls out its HITFET™+ family of protected low-side switches


4500V 1200A IEGT Module Launched

4500V 1200A IEGT Module Launched

Toshiba Electronics Europe has launched a high – current 4500V, 1200A power module for use in rail traction, industrial motor control, renewable…


PLUTO A High Temperature 60A 1200V Power Module

PLUTO A High Temperature 60A 1200V Power Module

CISSOID releases CHT-PLUTO, a high-temperature power module that can operate reliably between -55°C and +225°C and can deliver up to 60A


new products Jul 01, 2015 by CISSOID
Highest Current Gallium Nitride Power Transistor

Highest Current Gallium Nitride Power Transistor

GaN Systems Inc. launches the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors based on its three core…


new products Jul 01, 2015 by GaN Systems
Integrate Gallium Nitride and Silicon for Faster Higher Efficiency Devices

Integrate Gallium Nitride and Silicon for Faster Higher Efficiency Devices

Integrated Device Technology announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride


Integrated Intelligent Power Modules for High-Performance Switching

Integrated Intelligent Power Modules for High-Performance Switching

ROHM Semiconductor presented its IPM (Intelligent Power Module) family optimized for high speed and power-efficient operation in motor driving and…


new products Jul 01, 2015 by ROHM
Ultra-High-Efficiency MOSFET Family by Adding 30V  and 60V Devices

Ultra-High-Efficiency MOSFET Family by Adding 30V and 60V Devices

Toshiba Electronics Europe (TEE) has expanded its family of ultra-high-efficiency, low-voltage MOSFETs by adding new 30V and 60V devices to the…