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Richardson Electronics now offering SiC Devices from Global Power

Richardson Electronics now offering SiC Devices from Global Power


News May 18, 2016 by Jeff Shepard
4 Million Euros Series A Round for Ascatron SiC Devices

4 Million Euros Series A Round for Ascatron SiC Devices


News May 18, 2016 by Jeff Shepard
SiC Power Devices Aim to Accelerate Automotive Electrification

SiC Power Devices Aim to Accelerate Automotive Electrification

IQE Joins imec’s GaN-on-Silicon Affiliation Program

IQE Joins imec’s GaN-on-Silicon Affiliation Program


News May 15, 2016 by Jeff Shepard
5A Gate Drive Optocouplers for IGBTs and SiC/GaN MOSFETs

5A Gate Drive Optocouplers for IGBTs and SiC/GaN MOSFETs

GaN Partnership pened by Exagan and TUV NORD GROUP

GaN Partnership pened by Exagan and TUV NORD GROUP

First GaN Power ICs Leave Silicon Behind

First GaN Power ICs Leave Silicon Behind

Navitas Semiconductor announced the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ monolithically-integrated 650V…


Minister Visit to Danfoss Silicon Power

Minister Visit to Danfoss Silicon Power

Schleswig-Holstein's Minister for Economic Affairs, Labour, Transport and Technology, Reinhard Meyer, visited Danfoss Silicon Power March 4th


SiC Cascode in 440 VAC – 800 VDC Power Factor Correction

SiC Cascode in 440 VAC – 800 VDC Power Factor Correction

This article explores the wide bandgap switching devices design tradeoffs for efficiency and power factor in implementing designs at higher…


Protect Control Sense Market Application Solutions Featured at PCIM Europe 2016

Protect Control Sense Market Application Solutions Featured at PCIM Europe 2016

Littelfuse, Inc. will be attending one of the world’s leading events, the PCIM Europe 2016 in Nuremberg from May 10-12, 2016


new products May 11, 2016 by Littelfuse
Panasonic Showcases GaN, Thermal and Passive Solutions

Panasonic Showcases GaN, Thermal and Passive Solutions

SiC Schottkys have 50% Higher Current Density and Improved Surge Ratings

SiC Schottkys have 50% Higher Current Density and Improved Surge Ratings

All-SiC Half-Bridge Power Module & Gate Driver Combination

All-SiC Half-Bridge Power Module & Gate Driver Combination

Silicon and GaN Transistor Comparison: Optimized Inverter Design

Silicon and GaN Transistor Comparison: Optimized Inverter Design

This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.


User Configurable Gate Drives

User Configurable Gate Drives

This article discusses the user configurable gate drives' performance benefits for converter power stack designers and maintenance engineers.


Avoidance of Reverse Recovery Ringing in Wide Band Gap Devices

Avoidance of Reverse Recovery Ringing in Wide Band Gap Devices

This article discusses the benefits of nHPD2 packaging technology and the wider market need for operational high power wide band gap devices.


Industry’s First Web-Based Circuit Simulator Dedicated to Evaluating Silicon Carbide Devices

Industry’s First Web-Based Circuit Simulator Dedicated to Evaluating Silicon Carbide Devices

This article introduces Wolfspeed, a Cree Company's free and powerful online circuit-simulation tool for power designs, the SpeedFit…


new products May 06, 2016 by Wolfspeed
Using DC-DC Converters in Parallel

Using DC-DC Converters in Parallel

This article discusses methods in using two DC-DC converters in parallel operation for better reliability and redundancy for devices.


Nexeon Raises £30 million for Silicon-Anode Li-ions

Nexeon Raises £30 million for Silicon-Anode Li-ions


News May 05, 2016 by Jeff Shepard
Packaging for High-Voltage GaN Power Transistors

Packaging for High-Voltage GaN Power Transistors