Texas Instruments introduces a new 60-V N-channel FemtoFET power transistor that provides the industry’s lowest resistance
Texas Instruments introduces a new 60-V N-channel FemtoFET power transistor that provides the industry’s lowest resistance
This article discusses the announcement of the delivery of the CISSOID's first prototype of 3-phase 1200V/100A SiC MOSFET…
This article discusses the announcement of the delivery of the CISSOID's first prototype of 3-phase 1200V/100A SiC MOSFET IPMs to Thales…
This article introduces the new IGBT module generation of Mitsubishi Electric with improved Insulated Metal Baseplate as…
This article introduces the new IGBT module generation of Mitsubishi Electric with improved Insulated Metal Baseplate as a key element of the…
Mersen presented its unique solution to get the best of the 2 worlds: high T° (up to 200°C) and low inductance…
Mersen presented its unique solution to get the best of the 2 worlds: high T° (up to 200°C) and low inductance laminated busbar for power module…
This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance…
This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance and efficiency.
Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.”…
Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.” While silicon carbide devices
Littelfuse, Inc. has introduced the SP1026 Series 15pF 30kV Bidirectional Discrete TVS Diode Array
Littelfuse, Inc. has introduced the SP1026 Series 15pF 30kV Bidirectional Discrete TVS Diode Array
This article discusses the advantages of IXYS' MMIXT132N50P3 with current mirror to monitor the drain current and its…
This article discusses the advantages of IXYS' MMIXT132N50P3 with current mirror to monitor the drain current and its various applications.
This article discusses the main features which make the IGCT an attractive option for high power applications with…
This article discusses the main features which make the IGCT an attractive option for high power applications with respect to the technology…
This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace…
This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace silicon in power devices.
This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.
This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.
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