Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the word’s fastest…
Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the word’s fastest…
MacMic “HN” series 1200V IGBT modules, using the latest generation of Infineon high-speed IGBT chip, is one of the…
MacMic “HN” series 1200V IGBT modules, using the latest generation of Infineon high-speed IGBT chip, is one of the few high-speed IGBT modules…
Peregrine Semiconductor Corp. introduces the word’s fastest GaN FET driver, the UltraCMOS® PE29100
Peregrine Semiconductor Corp. introduces the word’s fastest GaN FET driver, the UltraCMOS® PE29100
Mersen presented its unique solution to get the best of the 2 worlds: high T° (up to 200°C) and low inductance…
Mersen presented its unique solution to get the best of the 2 worlds: high T° (up to 200°C) and low inductance laminated busbar for power module…
This article discusses the main features which make the IGCT an attractive option for high power applications with…
This article discusses the main features which make the IGCT an attractive option for high power applications with respect to the technology…
This article describes a new 8.5 kV low loss thyristor family designed for industrial applications with full blocking…
This article describes a new 8.5 kV low loss thyristor family designed for industrial applications with full blocking capability at 50Hz/60Hz…
This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET…
This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.
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