GaN High Electron Mobility Transistors (GaN HEMT) have a lower driving loss and shorter deadtime circuit benefits due…
GaN High Electron Mobility Transistors (GaN HEMT) have a lower driving loss and shorter deadtime circuit benefits due to significantly…
FTDI Chip has introduced the FT4233H, advanced bridge IC with USB Type-C connectivity and USB power delivery (PD) Rev.…
FTDI Chip has introduced the FT4233H, advanced bridge IC with USB Type-C connectivity and USB power delivery (PD) Rev. 3.0 controller.
Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power…
Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors…
Power Integrations announces the release of its BridgeSwitch™ integrated half-bridge (IHB) motor driver IC family.
Power Integrations announces the release of its BridgeSwitch™ integrated half-bridge (IHB) motor driver IC family.
Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ…
Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support…
GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and…
GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and Application Conference and…
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