Infineon Technologies AG adds a device to its cost-effective and compact-size EiceDRIVER™ 1EDN TDI (truly differential inputs) 1-channel…
Infineon Technologies AG adds a device to its cost-effective and compact-size EiceDRIVER™ 1EDN TDI (truly differential inputs) 1-channel…
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency.
The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency.
This article discusses the benefits of commercial GaN power transistors in comparison to Si SJMOS and SiC MOS transistors…
This article discusses the benefits of commercial GaN power transistors in comparison to Si SJMOS and SiC MOS transistors for a soft-switching LLC…
Efficient Power Conversion (EPC) introduces the first of a new integrated circuit (IC) product family offering higher…
Efficient Power Conversion (EPC) introduces the first of a new integrated circuit (IC) product family offering higher performance and smaller…
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