This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be…
This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be packaged in a TO-247.
GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, announced topside cooling…
GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, announced topside cooling technology in its wide range of…
EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.
EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.
Infineon Technologies AG announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio.
Infineon Technologies AG announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio.