ROHM has recently announced the development of a high-efficiency power management IC optimized for Freescale™…
ROHM has recently announced the development of a high-efficiency power management IC optimized for Freescale™ Semiconductor's i.MX 6SoloLite…
Overview ECPE wide bandgap user forums have established as an international event where users - i.e., engineers…
Overview ECPE wide bandgap user forums have established as an international event where users - i.e., engineers developing advanced power…
This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be…
This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be packaged in a TO-247.