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Global Power Device Comes out of Stealth, Launches SiC Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Intersil’s ISL6446A Dual PWM/Linear Controller Provides Efficient, Flexible Single-Chip Solution

Intersil’s ISL6446A Dual PWM/Linear Controller Provides Efficient, Flexible Single-Chip Solution

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

Power Integrations Names Radu Barsan Vice President of Technology

Power Integrations Names Radu Barsan Vice President of Technology


News Mar 10, 2013 by Jeff Shepard
Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Diodes Incorporated Closes Acquisition of BCD Semiconductor

Diodes Incorporated Closes Acquisition of BCD Semiconductor


News Mar 05, 2013 by Jeff Shepard
SemiSouth Lab’s SiC Manufacturing and Test Equipment to be Sold via Global Webcast Auction

SemiSouth Lab’s SiC Manufacturing and Test Equipment to be Sold via Global Webcast Auction


News Mar 05, 2013 by Jeff Shepard
Toshiba Launches 100V Low ON-Resistance N-ch Power MOSFET for Automotive Applications

Toshiba Launches 100V Low ON-Resistance N-ch Power MOSFET for Automotive Applications

MagnaChip to Offer 0.35um Ultra-High Voltage BCD Process for Integrated Smart Energy Applications

MagnaChip to Offer 0.35um Ultra-High Voltage BCD Process for Integrated Smart Energy Applications


News Mar 03, 2013 by Jeff Shepard
High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

Transphorm Teams with Yskawa for GaN-based High-Power Converter

Transphorm Teams with Yskawa for GaN-based High-Power Converter


News Feb 26, 2013 by Jeff Shepard
GaN Systems Expands With New Technical Support Office in the UK

GaN Systems Expands With New Technical Support Office in the UK


News Feb 26, 2013 by Jeff Shepard
IXYS Integrates Thyristor and IGBT to offer “Ideal Phase Leg” for Energy-Efficient Applications

IXYS Integrates Thyristor and IGBT to offer “Ideal Phase Leg” for Energy-Efficient Applications

Integrated-FET Buck DC-DCs from Micrel Provide Optimized Solution Costs For 12V Input Rails

Integrated-FET Buck DC-DCs from Micrel Provide Optimized Solution Costs For 12V Input Rails

Allegro Adds Innovative Package Option For Their Existing Current Sensor IC Portfolio

Allegro Adds Innovative Package Option For Their Existing Current Sensor IC Portfolio


News Feb 25, 2013 by Jeff Shepard
Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

Cree and Eta to Demonstrate High-Efficiency (70%+) GaN-Based Power Amplifier for Mobile Base Stations

Cree and Eta to Demonstrate High-Efficiency (70%+) GaN-Based Power Amplifier for Mobile Base Stations


News Feb 19, 2013 by Jeff Shepard
Infineon’s 300mm Thin Wafer Fab Completes Qualification Begins Production

Infineon’s 300mm Thin Wafer Fab Completes Qualification Begins Production


News Feb 18, 2013 by Jeff Shepard