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High-Side, High-Frequency FET Gate Driver Features -55°C to 150°C Operation

High-Side, High-Frequency FET Gate Driver Features -55°C to 150°C Operation

Showa Denko to launch 6-inch SiC Epitaxial Wafers for Power Devices

Showa Denko to launch 6-inch SiC Epitaxial Wafers for Power Devices


News Sep 29, 2013 by Jeff Shepard
85V Half-Bridge FET Driver features Bootstrap Diode and Programmable Gate Drive

85V Half-Bridge FET Driver features Bootstrap Diode and Programmable Gate Drive

Allegro Micro Introduces Automotive/Industrial Dual Full-Bridge Driver IC

Allegro Micro Introduces Automotive/Industrial Dual Full-Bridge Driver IC

GaN-Resonant Project Launched by BMBF with 1.2 Million Euro Funding

GaN-Resonant Project Launched by BMBF with 1.2 Million Euro Funding


News Sep 25, 2013 by Jeff Shepard
EPC Blurs the Line Between Power and RF Transistors with new Multi-GHz GaN Devices

EPC Blurs the Line Between Power and RF Transistors with new Multi-GHz GaN Devices

Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

TowerJazz and DMB Announce Volume Production for AC Direct LED Driver ICs

TowerJazz and DMB Announce Volume Production for AC Direct LED Driver ICs


News Sep 23, 2013 by Jeff Shepard
Highly-Integrated PFC IC for Compact Consumer Products and PCs

Highly-Integrated PFC IC for Compact Consumer Products and PCs

RFMD Claims World’s First 6-Inch GaN-on-SiC Wafers for RF Power Transistors

RFMD Claims World’s First 6-Inch GaN-on-SiC Wafers for RF Power Transistors


News Sep 18, 2013 by Jeff Shepard
80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

Toshiba Expands Family of SiC Schottky Barrier Diodes

Toshiba Expands Family of SiC Schottky Barrier Diodes

High-Power 1206 Wide-Terminal Flat Chip Resistors Handle 0.75W

High-Power 1206 Wide-Terminal Flat Chip Resistors Handle 0.75W

Dialog Digital Controller IC Lowers Cost and Standby Power in Smartphone Power Supplies

Dialog Digital Controller IC Lowers Cost and Standby Power in Smartphone Power Supplies

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

APEI-lead Team Developing SiC and GaN Traction Drive Systems

APEI-lead Team Developing SiC and GaN Traction Drive Systems


News Sep 08, 2013 by Jeff Shepard
Possibly the Best Power Electronics Event of 2013

Possibly the Best Power Electronics Event of 2013


News Sep 05, 2013 by Jeff Shepard
Next-Generation System for Power Devices Transitioning to Large Wafer Formats

Next-Generation System for Power Devices Transitioning to Large Wafer Formats


News Sep 03, 2013 by Jeff Shepard
ams Invests over €25M to Establish Production Capacity for Analog 3D ICs

ams Invests over €25M to Establish Production Capacity for Analog 3D ICs


News Sep 02, 2013 by Jeff Shepard
Imec and Veeco to Collaborate on Production of GaN-on-Si Devices

Imec and Veeco to Collaborate on Production of GaN-on-Si Devices


News Sep 02, 2013 by Jeff Shepard