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GaN-on-Si Devices Show No Degradation from Irradiation

GaN-on-Si Devices Show No Degradation from Irradiation


News Mar 07, 2017 by Jeff Shepard
Single-chip 2.4GHz Transceiver for Wireless ZigBee and IoT

Single-chip 2.4GHz Transceiver for Wireless ZigBee and IoT

Dual-Mode IC Supports Bluetooth Classic and LE 4.2

Dual-Mode IC Supports Bluetooth Classic and LE 4.2

Mind the Gap  Wide Band Gap Semiconductors are Gaining Importance

Mind the Gap Wide Band Gap Semiconductors are Gaining Importance

Designers of power supplies, motor control and inverter systems, RF circuitry, photovoltaic circuits and a variety of other power switching schemes…


Swatch Claims the World’s Smallest Bluetooth Chip

Swatch Claims the World’s Smallest Bluetooth Chip


News Mar 05, 2017 by Jeff Shepard
Misubishi adds 600V SiC Schottky-Barrier Diodes

Misubishi adds 600V SiC Schottky-Barrier Diodes

Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Efficient Power Conversion Corporation (EPC) is proud to announce the opening of an Applications Center in Blacksburg, Virginia.  


new products Mar 03, 2017 by EPC
High Voltage Ceramic Chip Capacitors Evaluated Acoustically

High Voltage Ceramic Chip Capacitors Evaluated Acoustically

This article discusses how acoustic micro imaging tools work and how it helps detect and keep defective capacitors out of production.


Littelfuse Owns Majority of SiC Device Maker Monolith Semi

Littelfuse Owns Majority of SiC Device Maker Monolith Semi


News Mar 02, 2017 by Jeff Shepard
GaN enables Wide-Input and Compact 12W DC-DCs

GaN enables Wide-Input and Compact 12W DC-DCs


News Mar 02, 2017 by Jeff Shepard
SOI Wafer is a Suitable Substrate for GaN Crystals

SOI Wafer is a Suitable Substrate for GaN Crystals


News Mar 02, 2017 by Jeff Shepard
600V MOSFET with Integrated Fast Body Diode

600V MOSFET with Integrated Fast Body Diode

SiC Gate Driver Optimized for 62mm Modules

SiC Gate Driver Optimized for 62mm Modules

Enhanced Radiation Hardened MOSFET Family for Space

Enhanced Radiation Hardened MOSFET Family for Space

IR HiRel, an Infineon Technologies AG company, has launched its first radiation hardened MOSFETs based on the proprietary N-channel R9 technology…


Ag-Sintering as an Enabler for Thermally Demanding Electronic and Semiconductor Applications

Ag-Sintering as an Enabler for Thermally Demanding Electronic and Semiconductor Applications

This article highlights Advanced Packaging Center and Alpha Assembly Solutions Silver (Ag) sintering proven and reliable bonding technology for…


Integrated MOSFET Voltage Regulator for PoL Designs

Integrated MOSFET Voltage Regulator for PoL Designs

Third-Generation MOSFET Platform Expanded to 1200V

Third-Generation MOSFET Platform Expanded to 1200V

Wolfspeed expands its innovative C3M™ platform by introducing a 1200V, 75mΩ MOSFET in low-inductance discrete packaging


new products Feb 23, 2017 by Wolfspeed
Transphorm to Rev High-Voltage GaN at APEC

Transphorm to Rev High-Voltage GaN at APEC

1200V 75mOhm SiC FET in Low-Inductance Package

1200V 75mOhm SiC FET in Low-Inductance Package

The Creation and Potential Cell Structures of SiC Devices

The Creation and Potential Cell Structures of SiC Devices

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and showing that…