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Active OR’ing MOSFET Controller Supports up to 400V

Active OR’ing MOSFET Controller Supports up to 400V

Si2 Contributes Advanced IC Power Modeling Tech to IEEE

Si2 Contributes Advanced IC Power Modeling Tech to IEEE


News Apr 11, 2017 by Jeff Shepard
10A 4000V Dual-Channel Isolated Gate-Driver

10A 4000V Dual-Channel Isolated Gate-Driver

IXYS Corporation announced a 10A/4000V, dual-channel, isolated gate-driver: IXIDM1401_1505_O


new products Apr 11, 2017 by IXYS
Highly Versatile DrMOS Power Module

Highly Versatile DrMOS Power Module

Alpha and Omega Semiconductor introduced AOZ5038QI, the highly versatile latest generation of power modules. The AOZ5038QI integrates a dual gate…


100kW-Class Inverter Kit Solution for HEV and EV

100kW-Class Inverter Kit Solution for HEV and EV


News Apr 10, 2017 by Jeff Shepard
New Class of Carbon Allotropes may Transform Electronics

New Class of Carbon Allotropes may Transform Electronics


News Apr 10, 2017 by Jeff Shepard
Double Sided Cooling to 60V Power MOSFETs for Motor Control and Power Supplies

Double Sided Cooling to 60V Power MOSFETs for Motor Control and Power Supplies

Toshiba Electronics Europe has extended its range of high-efficiency U-MOS IX-H MOSFETs with an N-channel device in a ‘DSOP Advance’ SMD package


Reliable GaN Switches for Datacenter and Telecom Power

Reliable GaN Switches for Datacenter and Telecom Power

6-GHz GaN Power Amplifier Modules

6-GHz GaN Power Amplifier Modules

Third-Generation SiC MOSFET Platform expanded to 1200V

Third-Generation SiC MOSFET Platform expanded to 1200V

Wolfspeed expands its innovative C3M™ platform through the introduction of 1200V, 75mΩ MOSFET in low-inductance discrete packaging


new products Apr 07, 2017 by Wolfspeed
SiC at Japan’s Synchrotron Radiation Research Institute

SiC at Japan’s Synchrotron Radiation Research Institute


News Apr 06, 2017 by Jeff Shepard
Ballistic Missile System to get GaN Upgrade

Ballistic Missile System to get GaN Upgrade


News Apr 06, 2017 by Jeff Shepard
1200V Silicon-Carbide Schottky Rectifiers in DPAK-2L

1200V Silicon-Carbide Schottky Rectifiers in DPAK-2L

Quasi-Resonant Flyback Controller and Integrated Power IC

Quasi-Resonant Flyback Controller and Integrated Power IC

Partners to Develop Wireless Battery Management IC

Partners to Develop Wireless Battery Management IC


News Apr 05, 2017 by Jeff Shepard
11mOhm, 30V FET Increases Power Density and Efficiency

11mOhm, 30V FET Increases Power Density and Efficiency

A Practical Study on Three-Level Hybrid SiC/Si Inverters

A Practical Study on Three-Level Hybrid SiC/Si Inverters

This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that allows high degree of freedom…


1200V SiC Dual Schottky Diodes in SOT-227

1200V SiC Dual Schottky Diodes in SOT-227

1200V SiC MOSFET Technology Platform to be Revealed

1200V SiC MOSFET Technology Platform to be Revealed

Extremely Efficient Energy Storage Based On Three-Level Silicon Carbide Power Module

Extremely Efficient Energy Storage Based On Three-Level Silicon Carbide Power Module

This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency and environmental energy…