EEPower

Latest Semiconductors & ICs Articles

Categories

HiperPFS-4 Power Factor Correction ICs Enable 98 Efficient PFC Designs Up to 550 W

HiperPFS-4 Power Factor Correction ICs Enable 98 Efficient PFC Designs Up to 550 W

Power Integrations announced its HiperPFSTM-4 family of power factor correction (PFC) ICs targeting excellent efficiency and power factor…


HydraPACK Drive IGBT Modules and PCC Capacitors Help Maximize xEV Inverter Efficiency

HydraPACK Drive IGBT Modules and PCC Capacitors Help Maximize xEV Inverter Efficiency

This article features the new Infineon HybridPACK Drive IGBT module characterized with compact design and high efficiency for e-mobility applications.


Integrated 600V GaN Half-Bridge for E-Mobility

Integrated 600V GaN Half-Bridge for E-Mobility

Titanium 3kW Front End uses 49 milliOhm GaN FETs

Titanium 3kW Front End uses 49 milliOhm GaN FETs

Sherlock Provides Semiconductor Wearout Predictions

Sherlock Provides Semiconductor Wearout Predictions


News May 14, 2017 by Jeff Shepard
Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

The past few years have been notable for the increased rate of investment in developing alternative semiconductor materials such as silicon carbide…


Scalable Euro Roll2Rail IGBT Module Drive Solution

Scalable Euro Roll2Rail IGBT Module Drive Solution

ON Semi will Showcase Growing Strength in Power

ON Semi will Showcase Growing Strength in Power

DuPont and SBE Collaborate on High-Temp Caps for SiC Designs

DuPont and SBE Collaborate on High-Temp Caps for SiC Designs


News May 10, 2017 by Jeff Shepard
GaN 3kW Bridgeless-Totem-Pole PFC Achieves 99% Efficiency

GaN 3kW Bridgeless-Totem-Pole PFC Achieves 99% Efficiency


News May 10, 2017 by Jeff Shepard
DTF and SBE Partner on High-Temp DC Link Caps for WBG Semis

DTF and SBE Partner on High-Temp DC Link Caps for WBG Semis


News May 09, 2017 by Jeff Shepard
X-FAB and Exagan Fab GaN-on-Si Devices on 200-mm Wafers

X-FAB and Exagan Fab GaN-on-Si Devices on 200-mm Wafers


News May 09, 2017 by Jeff Shepard
1200V SiC Diodes Deliver Superior Efficiency and Robustness

1200V SiC Diodes Deliver Superior Efficiency and Robustness

GaN Power IC Experts to Present at PCIM Europe 2017

GaN Power IC Experts to Present at PCIM Europe 2017

Vishay Announces “Super 12” Featured Products for 2017

Vishay Announces “Super 12” Featured Products for 2017

HVIGBT Modules from 3.3kV to 6.5kV and up to 1800A

HVIGBT Modules from 3.3kV to 6.5kV and up to 1800A

Applied Power Electronics Conference and Exposition  APEC 2017

Applied Power Electronics Conference and Exposition APEC 2017

This article discusses the 2017 Applied Power Electronics Conference and Exhibition that was held at the Tampa Convention Center, Tampa, Florida.


tech insights May 04, 2017 by Gary Dolny
High-Voltage Isolated Gate Driver Module

High-Voltage Isolated Gate Driver Module

This article features the IXYS' IXIDM1401 high-voltage isolated gate driver module and its features, higher performance and reliability.


All Metal Current Sense Chip Resistors

All Metal Current Sense Chip Resistors

DC-DC Converters Optimized to Power IGBT & SiC Drivers

DC-DC Converters Optimized to Power IGBT & SiC Drivers