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600V Intelligent IGBT Power Module IPM5 Series

600V Intelligent IGBT Power Module IPM5 Series

Alpha and Omega Semiconductor Limited announced the release of its intelligent power module, IPM5 series. Its compact size is optimized to deliver…


Three-Phase BLDC Controller and MOSFET Driver IC

Three-Phase BLDC Controller and MOSFET Driver IC

Allegro MicroSystems Europe has announced a three-phase brushless BLDC motor controller for use with N-channel external power MOSFETs. …


Industry’s First All-SiC 12 kV Power Module to Meet Reliability Benchmark for Harsh Environment Operation

Industry’s First All-SiC 12 kV Power Module to Meet Reliability Benchmark for Harsh Environment Operation

Wolfspeed releases the industry’s first power module that passes the harsh environment qualification test for simultaneous high-humidity,…


new products May 16, 2017 by Wolfspeed
Dialog Reports Continued Momentum for PMIC Design-ins

Dialog Reports Continued Momentum for PMIC Design-ins


News May 15, 2017 by Paul Shepard
Exagan Bringing the GaN-on-Si Revolution to PCIM

Exagan Bringing the GaN-on-Si Revolution to PCIM

Full-SiC 1.2kV Module Production Starts at Infineon

Full-SiC 1.2kV Module Production Starts at Infineon

HiperPFS-4 Power Factor Correction ICs Enable 98 Efficient PFC Designs Up to 550 W

HiperPFS-4 Power Factor Correction ICs Enable 98 Efficient PFC Designs Up to 550 W

Power Integrations announced its HiperPFSTM-4 family of power factor correction (PFC) ICs targeting excellent efficiency and power factor…


HydraPACK Drive IGBT Modules and PCC Capacitors Help Maximize xEV Inverter Efficiency

HydraPACK Drive IGBT Modules and PCC Capacitors Help Maximize xEV Inverter Efficiency

This article features the new Infineon HybridPACK Drive IGBT module characterized with compact design and high efficiency for e-mobility applications.


Integrated 600V GaN Half-Bridge for E-Mobility

Integrated 600V GaN Half-Bridge for E-Mobility

Titanium 3kW Front End uses 49 milliOhm GaN FETs

Titanium 3kW Front End uses 49 milliOhm GaN FETs

Sherlock Provides Semiconductor Wearout Predictions

Sherlock Provides Semiconductor Wearout Predictions


News May 14, 2017 by Jeff Shepard
Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

The past few years have been notable for the increased rate of investment in developing alternative semiconductor materials such as silicon carbide…


Scalable Euro Roll2Rail IGBT Module Drive Solution

Scalable Euro Roll2Rail IGBT Module Drive Solution

ON Semi will Showcase Growing Strength in Power

ON Semi will Showcase Growing Strength in Power

DuPont and SBE Collaborate on High-Temp Caps for SiC Designs

DuPont and SBE Collaborate on High-Temp Caps for SiC Designs


News May 10, 2017 by Jeff Shepard
GaN 3kW Bridgeless-Totem-Pole PFC Achieves 99% Efficiency

GaN 3kW Bridgeless-Totem-Pole PFC Achieves 99% Efficiency


News May 10, 2017 by Jeff Shepard
DTF and SBE Partner on High-Temp DC Link Caps for WBG Semis

DTF and SBE Partner on High-Temp DC Link Caps for WBG Semis


News May 09, 2017 by Jeff Shepard
X-FAB and Exagan Fab GaN-on-Si Devices on 200-mm Wafers

X-FAB and Exagan Fab GaN-on-Si Devices on 200-mm Wafers


News May 09, 2017 by Jeff Shepard
1200V SiC Diodes Deliver Superior Efficiency and Robustness

1200V SiC Diodes Deliver Superior Efficiency and Robustness

GaN Power IC Experts to Present at PCIM Europe 2017

GaN Power IC Experts to Present at PCIM Europe 2017