Premiering at the PCIM Europe Conference, research results and developments along the entire value chain of power electronics will be presented to the
Premiering at the PCIM Europe Conference, research results and developments along the entire value chain of power electronics will be presented to the
Transphorm Inc.—the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101…
Transphorm Inc.—the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified 650 V gallium…
Addressing the fast-growing demand for silicon carbide (SiC) solutions, Infineon Technologies launches devices in the…
Addressing the fast-growing demand for silicon carbide (SiC) solutions, Infineon Technologies launches devices in the 1200V CoolSiC™ MOSFET…
Nexperia, the global leader in discretes, logic, and MOSFET devices, today announced that in just two years as a…
Nexperia, the global leader in discretes, logic, and MOSFET devices, today announced that in just two years as a standalone company, it is…
GaN Systems announced the availability of the GS-065 low current transistor line.
GaN Systems announced the availability of the GS-065 low current transistor line.
Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today…
Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced a range of…
This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source…
This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source pin for fast SiC MOSFETs.
Hans Keller joins Höganäs as President Product Area Surface & Joining Technologies on 1 March 2019.
Hans Keller joins Höganäs as President Product Area Surface & Joining Technologies on 1 March 2019.
Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today…
Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced the SIC1182K…
JEDEC announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power…
JEDEC announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices
This article examines changing a power module's substrate as a possible option for lowering its semiconductors junction…
This article examines changing a power module's substrate as a possible option for lowering its semiconductors junction temperatures without…
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