Toshiba America Electronic Components Inc. (Irvine, CA) introduced its U-MOS III third-generation trench-cell technology, reducing the switching speed and on-resistance by up to 25 percent compared to the previous generation.
Toshiba's U-MOS III was achieved using a new trench-cell structure MOSFET technology. Designed for power-management switching, lithium-ion battery-protection circuits and synchronous rectification at the secondary portion of dc/dc converters, the U-MOS III process technology is available in a low on-resistance series and the high-speed series.
The low on-resistance U-MOS III technology has an on-resistance of 7 milliohms at 10V. The U-MOS III technology also features a built-in zener diode between the gate and source pins for ESD protection.
"Toshiba continues to focus on developing new medium-power processes and packaging solutions to meet the growing demand for smaller and thinner surface-mount devices," said Brach Cox, business development manager, power semiconductors for Toshiba America Electronic Components. "With the introduction of our third-generation U-MOS III process technology, we continue to push the envelope in minimizing the board space required by power semiconductors for next-generation portable and wireless devices."
