SilTerra Enters Power MOSFET Market With South Sea Semiconductor

Malaysian-based wafer foundry SilTerra Malaysia Sdn Bhd and Hong Kong-based South Sea Semiconductor Ltd. announced the successful completion of the joint development of V-Tr FET technology for highly efficient, low RDS(on) Power MOSFET devices. The technology is now available for mass production.

V-Tr FET technology features a narrow trench gate electrode with a cell density of 488 million per inch square. The technology is realized using existing production ready 0.16 micron tool set. Both 20V P-channel and 20V N-channel devices are developed using this V-Tr FET technology which delivers competitive low RDS(on) at 3.4A with SOT-23 package and 6.0A with TSSOP-8 package respectively.

Power MOSFET devices are used in Li-Ion battery pack, load switching, power switching and DC-DC converter for portable electronic applications such as mobile phones, MP3, portable media players, laptop and netbook computers for energy efficient power management to prolong battery life.

"By leveraging our engineering and manufacturing capability, we are glad to partner with South Sea Semiconductor to jointly develop the proprietary V-Tr FET technology to penetrate the lucrative Power MOSFET business. The exciting growth of energy efficient, battery operated wireless electronic gadgets has presented tremendous opportunities for Silterra and South Sea Semiconductor to serve our fabless and IDM customers in this space. By partnering South Sea Semiconductor, Silterra can offer our customers flexible business model including full turnkey service using V-Tr FET technology." commented Yit Loong Lai, SilTerra Vice President of World wide Sales and Marketing.

"This is an exciting collaboration project with Silterra Malaysia. The joint development demonstrates mutual strength & commitment from both teams to make the V-Tr FET technology a successful milestone. South Sea Semiconductor has been a leader in Power MOSFET development and together with Silterra, we have successfully qualified our proprietary doped trench technique. This technology is developed with fewer masking layers and smaller trench pitch to significantly increase the number of dies per wafer and hence, reduce the cost. The partnership with Silterra enables us to win the market with time-to-market silicon proven solutions and provide full turnkey services to our customers." said Dr. Kwan Sze-Hon, Executive Director of South Sea Semiconductor.

"Both Silterra and South Sea Semiconductor will continue to drive next generation Power MOSFET device for performance enhancement and lower die cost which is capable to produce 1 billion cells per inch square. Patents have been filed to protect our Intellectual Property in this breakthrough innovation." Lai added.