IXYS Awarded Two Power Management IC Patents
IXYS Corp. (Santa Clara, CA) reported that two important patents for its power management integrated circuit (IC) program were issued. US Patent #6,917,227, issued July 12, 2005, covers power MOS driver IC technology that enables higher-efficiency, single and half-bridge gate driver configurations without the cross conduction losses found in other drivers in the market. US Patent #6,922,320 issued July 26, 2005, covers the company's hot-swap protection IC, which incorporates a sensor-less ground fault detection method to sense load disconnect.
US Patent #6,917,227 relates to the elimination of cross conduction in the output required for gate drive IC products, and is a key element for reduction of power losses and noise generated by MOSFET and IGBT drivers. IXYS has developed a broad range of low-side and half-bridge drivers targeted at a wide range of applications, including plasma display, motion control, and power supplies.
US Patent #6,922,320 relates to a method of eliminating the need for separate ground-fault detection pins, as well as implementation of active noise filtering and short-circuit/over-current detection. The IXYS method enables true "two-wire" cable connection systems, such as those in coaxial cables, limited to two connections of the inner conductor and outer shield. The hot-swap approach would be beneficial for various markets, including remotely powered CATV, telecommunications, cell-phone antenna amplifiers, and active speakers.