Honda & Rohm Announce Development Of ’Full-SiC’ Automotive Power Module

September 15, 2008 by Jeff Shepard

Honda R&D Co Ltd. and Rohm Co. Ltd. announced that they have jointly developed what they describe as "the world’s first" high-output power module composed of only SiC devices, for use in electric and hybrid cars. Rohm provided the SiC device technologies, while Honda contributed its offered power module technologies.

The power module consists of a converter and an inverter and uses a shot key barrier diode made of SiC and MOSFET (both manufactured by Rohm). The power module withstands 1,200V and has an output current of 230A.

Rohm states that it has been conducting research and development of SiC devices and inverters jointly with Nissan Motor Co. Ltd. as well as Honda R&D. In relation to inverters, Nissan recently revealed an inverter manufactured by replacing the existing diode with a SiC diode.