50 Most-Read Product News Stories for 2015: 20-11

January 06, 2016 by Power Pulse1595211359

The following is a listing (with links for the full story) of the most read Product News stories on PowerPulse.Net for 2015, thus providing a window into the "pulse" of the trends and interests in the Power Electronics Industry. This is the Fourth article in the series, which will conclude tomorrow.

#20: 97% Efficient 48V-to-12V POL with Monolithic GaN Half-Bridge

Efficient Power Conversion Corp. (EPC) announces the EPC2104, 100-V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user's power conversion system. more

#19: SiC-based Three-Phase UPS is 98% Efficient

Toshiba International Corporation (TIC) today announced its new G2020 Series uninterruptible power system (UPS). The G2020 Series is the latest three-phase UPS designed by Toshiba utilizing SiC power modules enabling the UPS to be 98% efficient with 50% load while operating in double-conversion mode. The G2020 Series UPS utilizes SiC power modules in a three-level design to provide customers with the ultimate in high efficiency power protection. Combining the latest in semiconductor technology with innovative circuit topology and high-performance full digital control ensures the highest level of reliable power quality to meet the demanding needs of the data center industry. more

#18: GaN Power Integrated Circuit for Wireless Power Transfer

Efficient Power Conversion Corp. (EPC) announces the EPC2107 (100V) and EPC2108 (60V) eGaN® half-bridge power integrated circuits with integrated bootstrap FET, eliminating gate driver induced reverse recovery loses as well as the need for a high-side clamp. This is the first time that a bootstrap FET has been integrated in an eGaN power circuit. more

#17: 800V SuperFET II MOSFETs Claim Lowest On-Resistance

Fairchild Semiconductor Corp. introduced its 800V SuperFET® II MOSFET family, featuring broad package offerings and claiming the industry's lowest on-resistance (Rdson) and output capacitance (Coss). The new family enables designers to improve the efficiency, cost-effectiveness and reliability of high performance solutions requiring breakdown voltage higher than 600V / 650V, and also reduces the board space of these designs by enabling the elimination of components. more

#16: 600V FETs in PowerPAK 8x8 feature Kelvin Connections

Vishay Intertechnology, Inc. is now offering its 600V E Series power MOSFETs in the compact PowerPAK® 8x8 package. The new Vishay Siliconix SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E all feature a large drain terminal for low thermal resistance and a Kelvin source connection that can increase efficiency by improving the gate drive signal. Their new low-profile, surface-mount PowerPAK 8x8 package is RoHS-compliant, halogen-free, and 100% lead (Pb)-free, and it provides a space-saving alternative to conventional TO-220 and TO-263 solutions. more

#15: TI and EPC Partner on 80-V Half-Bridge GaN FET Module

Texas Instruments, Inc. (TI) today introduced the industry's first 80-V, 10-A integrated gallium-nitride (GaN) FET power-stage prototype, which consists of a high-frequency driver and two GaN FETs in a half-bridge configuration – all in an easy-to-design quad flat no-leads (QFN) package. TI has an arranged supplier agreement with Efficient Power Conversion Corp. (EPC) for GaN FETs – the LMG5200 is a combination of TI's optimized driver and EPC's GaN combined in a high performance package to maximize performance and efficiency. more

#14: Digital Controller Looks toward Software-Defined Power

Microchip Technology Inc. announced the 14-member dsPIC33EP "GS" family of Digital Signal Controllers (DSCs). The dsPIC33EP "GS" family delivers the performance needed to implement more sophisticated non-linear, predictive and adaptive control algorithms at higher switching frequencies. These advanced algorithms enable power supply designs that are more energy efficient and have better power supply specifications. Higher switching frequencies enable the development of physically smaller power supplies that offer higher densities and lower costs. Compared with the previous generation of DSCs, the new dsPIC33EP "GS" devices provide less than half the latency, when used in a three-pole three-zero compensator, and consume up to 80% less power in any application. more

#13: 650V GaN Power Transistors feature 12mOhm Rdson

VisIC Technologies has claimed the world's lowest resistance 650V 50A GaN transistor specifying an Rdson as low as 12 mOhm and capable of operation at 1MHz. These devices are designed for use in power supplies, photovoltaic inverters and electrical motor drives. These subsystems are used extensively in industrial, commercial and residential applications: robotics, elevators, washers, air conditioners, etc. more

#12: GaN Transistors rated for 600V handle up to 15A

Panasonic Semiconductor Solutions Co., Inc. has extended its line of GaN power transistors with two new devices, the PGA26E19BV rated for 600V and 10A and the PGA26E08BV rated for 600V and 15A. These normally-off power switches are offered in an 8mm square 1.25mm thick package for high-density applications. They are fabricated on Panasonic's 6-inch GaN-on-silicon process. Applications are expected to include ac-dc power supplies, battery chargers and inverters for motor drives and photovoltaic installations. more

#11: Small eGaN FET has Low Price for HF Switching

Efficient Power Conversion Corporation (EPC) announces the EPC2039 power transistor, a high power density enhancement-mode gallium nitride (eGaN®) device. The EPC2039 is an extremely small, 1.82mm2, 80VDS, 6.8A power transistor with a maximum RDS(on) of 22 milliohms with 5V applied to the gate. This GaN power transistor delivers high performance in power conversion systems due to its high switching capabilities in a very small package. more