Zetex Releases N-channel Mosfets for Ultra Low Gate Drive Operation

Zetex Semiconductor has introduced three N-channel enhancement mode Mosfets, developed specifically for applications with limited drive voltage availability. The 20V ZXMN2B03E6 (SOT236), ZXMN2B14FH and ZXMN2B01F (both SOT23) are capable of low loss switching at a VGS of 1.8V, enabling them to be operated from two 1.2V cells or a single Li-Ion cell. The low gate drive of the device also means it can be driven directly by logic gates.

The company claims that RDS(on) for the three Mosfets is guaranteed to be less than 75, 100 and 200mΩ at 1.8VGS and 40, 55 and 100mΩ at 4.5VGS. Expected applications will include level shifting for high side disconnect switches, external switching for boost converter circuits and buffering low voltage microcontrollers and loads such as motors and solenoids.

The company claims that fast switching performance is another key feature of its proprietary UMOS technology. For example, the ZXMN2B01F rise and fall times are just 3.6ns and 10.5ns, for VGS= 4.5V and ID=1A.

Pricing at 1k volumes is as follows: US$0.165 (ZXMN2B01F), US$0.285 (ZXMN2B03E6) and US$0.270 (ZXMN2B14F).