Vishay Extends Family of N-Channel TrenchFET Power MOSFETs To Offer 8-30V VDS Range

Vishay Intertechnology, Inc. expanded its family of n-channel TrenchFET® power MOSFETs in the thermally enhanced PowerPAK® SC-75 package to offer a V_DS range from 8 to 30V. The devices are said to include the industry’s first 30V device in the 1.6 by 1.6mm footprint area, and a 20V MOSFET with the industry’s lowest on-resistance.

The new 30V SiB408DK and 20V SiB412DK join the previously released Siliconix SiB414DK, the first 8V single n-channel power MOSFET in the PowerPAK SC-75 footprint area. On-resistance for the SiB408DK is as low as 40 mΩ at 10V, while the SiB412DK offers an on-resistance down to 34 mΩ at 4.5V, which is said to be 21% lower than the closest competing device.

The PowerPAK SC-75 package measures 1.6 by 1.6 by 0.8 mm. This is 36% smaller than 2 by 2mm devices and 72% smaller than widely used TSOP-6 devices, while offering similar on-resistance. For designers, the smaller size of the PowerPAK SC-75 saves space and reduces power consumption in portable electronics, allowing for increased functionality while meeting consumer expectations for battery run times.

Typical applications for the n-channel PowerPAK SC-75 power MOSFETs will include load, PA, and battery switches in portable electronics. The devices will also save space in 1/8th or 1/16th bricks compared to common 3 by 3mm packages. The SiB408DK will also be used for load switching in notebook computers and netbooks.

The devices are halogen-free in accordance with IEC 61249-2-21 and are compliant with RoHS Directive 2002/95/EC. The MOSFETs are 100% Rg and UIS tested.

Samples and production quantities of the new n-channel PowerPAK SC-75 power MOSFETs are available now, with lead times of 10 to 12 weeks for larger orders. Pricing for U.S. delivery starts at $0.10 in 100,000-piece quantities.