Vishay Announces New 30V TrenchFET Power MOSFET With Maximum 2.25mΩ On-Resistance At 4.5V Gate Drive Voltage

Vishay Intertechnology, Inc. announced the first device in a new third-generation TrenchFET® power MOSFET family offering what is described as record-breaking specifications for on-resistance and on-resistance times gate charge.

The new TrenchFET Gen III Si7192DP, an n-channel device in the PowerPAK® SO-8 package, features maximum on-resistance of 2.25mΩ at a 4.5V gate drive voltage. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98 – said to be a new industry record for any VDS = 30V, VGS = 20V device in an SO-8 footprint. According to the company, compared to the closest competing devices optimized for low conduction losses and low switching losses, these represent the best available specifications on the market. Lower on-resistance and lower gate charge translate into lower conduction and switching losses respectively.

The Vishay Siliconix Si7192DP will be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Its low conduction and switching losses, according to the company, will enable more power-efficient and space-efficient designs for voltage regulator modules (VRMs), servers, and a wide range of systems using point-of-load (POL) power conversion.

Samples and production quantities of the Si7192DP are available now, with lead times of 10 to 12 weeks for large orders.