Ultra-Small P-Channel Enhancement-Mode Power MOSFETs

Advanced Power Electronics Corp. (USA) has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches. Combining fast switching, low on-resistance and cost-effectiveness, the AP2325GEU6-HF-3 is simple to use and has a low gate charge. It features a minimum drain-source breakdown voltage (BVDSS) of -20V, maximum RDS(ON) of 145mohms, a maximum continuous drain current (ID) at 25 degrees C of -1.8A, and a maximum pulse current of -7.2A (limited by the maximum junction temperature rise).

Comments Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. (USA): “These Advanced Power MOSFETs are available in the popular RoHS/REACH-compliant, halogen-free SOT-363 ultra-small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.”

Typical total gate charge (Qg) is rated for 6 nC, the typical gate-source charge is rated at 1 nC and the typical gate-drain (“Miller”) charge is 2 nC (all measured with ID = -1A, VDS = -10V and VGS = -4.5V). under test conditions of VDS = -10V, ID = -1A, RG = 3.3 Ohms and VGS = -5V; typical turn-on delay time is 4 ns, typical rise time is 22 ns, typical turn-off delay time is 16 ns and the typical fall time is 18 ns. The source-drain diode has a maximum forward on voltage rating of -1.2V, a typical reverse recovery time of 15 ns and a typical reverse recovery charge of 7 nC.