Toshiba Expands Line-Up of 30V N-Channel MOSFETs

Toshiba Corporation today announced that it has expanded its line-up of low voltage N-channel MOSFETs, used in protection circuits for lithium ion batteries and the power management switches of mobile equipment, with the addition of the model TPN2R203NC. Fabricated with eighth generation process, TPN2R203NC realizes low ON-resistance, which reduces conduction loss in equipment. Primary applications targeted by the new MOSFET include lithium-ion battery protection circuits and mobile phone power management switches.

Features of this MOSFET include: lower on-resistance has been achieved as a result of using the latest 8th generation process. The TSON Advance package, enabling high density mounting with high current capability. Compared to the widely used 5.0mm x 6.0mm SOP-8 package, the TSON Advance package developed by Toshiba reduces mount area requirements by 64 percent, while achieving the same power dissipation of 1.9W. And high avalanche resistance has been achieved. Specifications include: VDDS of 30 V, RDSON with VGS = 10V is typically 1.8 milliohms and a maximum of 2.2 milliohms and with VGS = 4.5V it is typically 2.8 milliohms and a maximum of 3.6 milliohms.

"The small, highly compact TSON Advance package helps reduce board space requirements while achieving high power density comparable to the larger SOP-8, " said Jeff Lo, business development manager, Discrete Power Devices, for Toshiba America Electronic Components. "As a result of this robust packaging technology, the new MOSFETs offer designers options to increase board density or reduce the overall board size."