Toshiba Adds 40, 60 & 80V MOSFETs For Isolated DC-DC Bus Converters

Toshiba America Electronic Components, Inc. (TAEC) has expanded its lineup of MOSFETs with a selection of higher power 40, 60 and 80V devices well suited for use in the primary side switch of an isolated dc-dc bus converter in mobile communications applications. These N-Channel devices can also be used in non- isolated dc-dc converters.

The seven new MOSFETs feature fast switching, enabled through lower gate charge (Q(SW)) and lower gate resistance (R(g)). The new MOSFETs are offered in SOP Advance packages with Aluminum Strap (Al- Strap) connections instead of conventional wire bonding technology to further reduce R(DS(ON)).

"The new devices expand the range of applications addressed by Toshiba’s lineup of UMOS VI-H MOSFETs, which use the latest (sixth) generation trench process in the Toshiba fast switching series. This process enables a significant reduction in gate switch charge and on-state resistance R(DS(ON)) compared to previous Toshiba devices, resulting in greater power efficiency," said Jeff Lo, Business Development Manager, Discrete Power Devices, for TAEC.

The three 40V MOSFETs: TPCA8045-H, TPCA8046-H and TPCA8047-H, feature drain current of 46A, 38 and 32A respectively, and a range of R(DS(ON)), capacitance and gate charge values, shown in the table below, to meet various load current requirements.

The three 60V devices: TPCA8048-H, TPCA8049-H and TPCA8050-H feature drain current of 35, 28 and 24A respectively, and also provide a range of R(DS(ON)), capacitance and gate charge values, shown in the table below, to meet various load current requirements.

The seventh device in the expanded lineup, TPCA8051-H, is an 80V MOSFET with drain current of 28A, R(DS(ON)) (typ.) of 6.0mΩ

Samples of the seven new Toshiba UMOS VI-H dc-dc converter MOSFETs are available now, with prices in sample quantities starting at $0.80.