New Industry Products

TI Introduces NexFET Power Block to Support High-Current, Multi-phase, POL Applications

June 06, 2010 by Jeff Shepard

Texas Instruments Inc. (TI) introduced a synchronous MOSFET half bridge that achieves greater than 90% efficiency at 25A – and in what the company says is half the area of competitive power MOSFET devices. TI’s new CSD86350Q5D Power Block combines two asymmetric NexFET® power MOSFETs in an advanced package that delivers high performance in low-voltage synchronous buck half-bridge applications, including servers, desktop and notebook PCs, base stations, switches, routers and high-current point-of-load (POL) converters.

In addition to improving efficiency and power density, the NexFET Power Block can generate up to 40A of current with a switching frequency of up to 1.5 MHz, which reduces solution size and cost. The optimized pinout and grounded lead frame significantly reduces development time and improves overall circuit performance.

Furthermore, the NexFET Power Block can achieve comparable performance to other semiconductor technologies, such as GaN, but in a cost effective manner.

Key features and benefits of CSD86350Q5D Power Block include: 5 x 6mm SON outline is half the size of two discrete MOSFETs in 5 x 6mm QFN packages; double the frequency without increasing power loss versus competitive solutions; and the SON package with an exposed grounded pad on the bottom simplifies layout.

NexFET Power Block device is available in volume in a 5-mm x 6-mm SON package. Suggested resale pricing for the CSD86350Q5D is $1.75 in 1,000-unit quantities. Samples and evaluation modules are available.