Microchip adds 700V SiC MOSFETs plus 700V and 1200V SiC Schottkys
Microchip Technology Inc. via its Microsemi subsidiary, announced the production release of a line of SiC power devices that offer proven reliability and provide the performance benefits of wide-bandgap technology. Complemented by Microchip's broad range of microcontrollers (MCUs) and analog solutions, the SiC devices join the company's growing family of reliable SiC products that meet the needs of EVs and other high-power applications in fast-growing markets.
According to Microchip, SiC semiconductors are a new option for power electronics to improve system efficiency, have a smaller form factor and operate at higher temperatures in products covering industrial, medical, mil-aerospace, aviation, and communication market segments.
The company's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive unclamped inductive switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10-15 Joule per square centimeter and robust short-circuit protection at 3-5 microseconds. The company's SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss. In addition, its SiC MOSFET and SiC SBD die can be paired together for use in modules.
EV Charging block diagram (Click on image to enlarge)
Microchip's 700V SiC MOSFETs and 700V and 1200V SiC Schottky barrier diodes join its existing portfolio of SiC power modules. The more than 35 discrete products that the company has added to its portfolio are available in volume, and are supported with comprehensive development services, tools, and reference designs.
The SiC products offer outstanding ruggedness proven via rigorous testing. Microchip now offers a broad family of SiC die, discretes, and power modules in a range of current, voltage ratings, and package types.
"SiC technology's accelerated evolution and adoption has begun, and Microchip offers both a long heritage in this market and the ongoing commitment to playing a leadership role in ensuring that global supply continues to meet growing demand for these products," said Rich Simoncic, senior vice president of Microchip's Discrete and Power Management business unit. "We are building out our portfolio with reliable products that are backed by the strong support infrastructure and supply chain that our customers need to execute and scale their development programs."
Microchip's SiC MOSFETs and Schottky barrier diodes (SBD) offer more efficient switching at higher frequencies, and the components pass ruggedness tests at levels considered critical for guaranteeing long-term reliability.
Furthermore, Microchip asserts that Schottky barrier diodes perform about 20% better than other SiC diodes in Unclamped Inductive Switching (UIS) ruggedness tests. These tests measure how well devices and components withstand degradation or premature failure under avalanche conditions. Such conditions occur when a voltage spike exceeds the device's breakdown voltage.
Microchip says its SiC MOSFETs also outperform alternatives in these ruggedness tests, exhibiting excellent gate oxide shielding and channel integrity with little lifetime degradation even after 100,000 cycles of Repetitive UIS (RUIS) testing.
Its SiC MOSFETs maintain high UIS capability at approximately 10J/cm2 to15J/cm2 and robust short-circuit protection at 3ms to 5ms. The company designed the SiC SBDs with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse current for lower switching loss. In addition, its SiC MOSFET and SiC SBD die can be coupled together for use in modules.
Microchip points out that it is one of the few suppliers to offer a range of both silicon and SiC discrete and module solutions. The company's products are suited for the growing number of EV systems including external charging stations, on-board chargers, dc-dc converters, and powertrain/traction control solutions.
Microchip backs the new SiC devices with its customer-driven obsolescence practice, which ensures devices will continue to be produced as long as customers need them.
Features
Extremely low Switching losses
- Zero reverse recovery charge improves system efficiency
High Power Density
- Smaller footprint device reduces system size and weight
High thermal conductivity
- 2.5x more thermally conductive than silicon
Reduced Sink Requirements
- Results in lower cost and smaller size
High-Temperature Operation
- Increased power density and improved reliability
Availability
Microchip supports its expanded SiC portfolio with a range of SiC SPICE models, SiC driver board reference designs, and a PFC Vienna reference design.
Its new scalable 30kW, three-phase Vienna PFC topology reference design is suited for fast EV charging and other high power automotive and industrial applications, giving customers more efficient switching as well as high avalanche/repetitive UIS and high short-circuit withstand ratings when utilizing the company's robust SiC MOSFETs and SiC diodes.
All of Microchip's SiC products are available in production volumes along with their related support offerings. The company offers a variety of die and package options for the SiC MOSFETs and SiC diodes.
