New Industry Products

Renesas Intros R2J20601NP SiP Driver-MOSFET

April 20, 2004 by Jeff Shepard

Renesas Technology Corp. (San Jose, CA) announced its system-in-package (SiP) device, "Driver-MOSFET Integrated SiP" that integrates a driver IC and two power MOSFETs with both high-side and low-side functions. Available in a QFN 56-pin package, the SiP device is suitable for voltage regulators that manage the switching operation of CPUs used in PCs and servers.

The new SiP device achieves a maximum efficiency of 87 percent (Vin = 12 V, Vout = 1.3 V), when operating at 1 MHz. Efficiency is 83 percent with a 25 A output current. This is a six-percent improvement over the earlier HAT2168H and HAT2165H high-performance power MOSFET combination devices offered by Renesas. The increased efficiency and higher frequency operation allows the use of smaller and fewer passive devices, such as inductors and capacitors, thereby making it possible to make the voltage regulator substantially more compact. High power supply efficiency also contributes to reduced power consumption.

The new R2J20601NP SiP comes in a compact 56-pin, QFN package (8 mm x 8 mm x 0.8 mm). The device is priced at $6 and sample shipments will begin on April 21, 2004.