Renesas Debuts RJK0305DPB/0301DPB MOSFET Chip Set

Renesas Technology Corp. (San Jose, CA), a joint venture between Hitachi Ltd. and Mitsubishi Electric Corp., announced a new power MOSFET chip set that achieves 90% power efficiency in a dc-dc converter with a 12 V input and 1.3 V/20 A output. The new chip set is comprised of RJK0305DPB high-side power MOSFET and the RJK0301DPB low-side power MOSFET. The devices are suitable for dc-dc converters that change a 12 V or 19 V input voltage into the 0.8 V to 2.5 V output voltage typically used by circuits in servers, notebook PCs and communications devices.

The chip set boosts the maximum attainable power supply efficiency. For a dc-dc converter with a 12 V input voltage, 1.3 V output voltage, and 20 A output current, the efficiency can reach 90% when the RJK0305DPB and RJK0301DPB MOSFETs are used, up from the 87.5% obtained with previous Renesas devices. Moreover, power loss drops by approximately 22%, from 3.7 W to 2.9 W, making possible an approximately 15% improvement in power supply output current with no change in thermal radiation conditions.

The RJK0305DPB and RJK0301DPB chips are built with a new manufacturing process and have designs carefully tuned to obtain the best possible performance for the different functions they implement in dc-dc converter designs. Specifically, the RJK0305DPB device has a drain-gate charge approximately 15% lower than previous Renesas products. By contrast, the RJK0301DPB offers an approximately 20% reduction in on-resistance.

The package for both MOSFETS is a loss-free package (LFPAK). Development of SOP-8 mounted models is underway, as are 60 V and 100 V VDSS products. The RJK0305DPB will be available in June 2005 in 10,000-unit quantities for $1.00 each. The RJK0301DPB is priced at $1.50 for 10,000-unit quantities, available in June 2005.