Next-Generation 25V MOSFETs for High-Power-Density Designs
Alpha and Omega Semiconductor Limited (AOS) has introduced the AONX38168, which utilizes the latest 25V N-Channel MOSFET Technology. The XSPairFET includes the low-side and high-side MOSFET in a leadless surface mount package, (5mm x 6mm outline) optimized for synchronous dc-dc converter applications.
The AONX38168 is designed with the latest bottom source packaging technology which has a lower switch node ringing due to lower parasitic inductance. The new device offers a higher power density comparative to existing solutions, and is well suited for server and telecommunication markets.
The AONX38168 is the newest generation of XSPairFETs, offering the lowest on-state resistance and best Figure of Merits (Rdson x Qg). The XSPairFET has bottom source connection for the low-side MOSFET which can result in improved thermal performance, simplified layout, and reduced EMI.
"With its significant performance improvement, the AONX38168 allows new designs to operate at higher switching frequencies," said Peter H. Wilson, Marketing Director of MOSFET product line at AOS.
"In addition, AOS can offer a complete solution with digital power and power IC products for dc-dc voltage regulation for demanding applications in server and telecommunications," added Wilson.
Pricing and Availability
The AONX38168 is immediately available in production quantities with a lead-time of 12-14 weeks. The unit price for 1,000 pieces is $1.70.