NEC Corp. (Japan) has developed what is claimed to be the world's first single-chip nitride semiconductor power transistor that is capable of achieving a power transmission output of >100W. The chip is designed to add functionality to next-generation mobile phone applications.
The device was developed by adopting a high-breakdown hetero-junction that is suitable for high-voltage operation, as well as by employing a 50µm thinned sapphire technology that improves the heat dissipation performance of the power transistor. The advanced isothermal heating process was enabled by the introduction of a thermal shunt air-bridge electrode.
The semiconductor achieves a high bias voltage operation of 40V through the adoption of GaN and AlGaN. The maximum power output is rated at 113W at 10-percent duty and 2GHz. This power output is facilitated by applying 40V to a transistor chip with an experimental gate width of 32mm.
