National Semi Intros LM5110 Dual Gate Driver
National Semiconductor Corp. (Santa Clara, CA) announced its new LM5110 dual gate drivers that offer high peak-output current and negative-to-positive output-voltage swing. The drivers are designed to drive large power MOSFETs and low-threshold, synchronous rectifiers found in communications infrastructure power supplies, motor controls and uninterruptible power supply systems.
The LM5110, housed in a tiny, thermally enhanced, 10-pin, 4mm x 4mm, LLP, chip-scale package, claims to be the industry’s first MOSFET driver offering split-supply capability to pull the gate below the source, so that low threshold MOSFETs are held in the OFF-state with design margin for drain to gate transients and threshold shift.
The driver features a wide supply voltage range from 3.5V to 14V, an integrated line under-voltage lockout circuit for safe and predictable operation, dual drivers that can be connected in parallel for twice the output current (10A peak current), ultra-fast switching speeds (14 nanosecond rise and fall times with 25 nanosecond propagation delay), three different versions (inverting, non-inverting and complementary), and an industrial temperature range from –40°C to +125°C.
Available now, the LM5110 is offered in either an SOIC-8 package or a 10-pin, surface-mount, LLP chip-scale package. It is priced at $0.65 each in 1,000 units.