New Industry Products

National Semi Intros LM5110 Dual Gate Driver

September 07, 2003 by Jeff Shepard

National Semiconductor Corp. (Santa Clara, CA) announced its new LM5110 dual gate drivers that offer high peak-output current and negative-to-positive output-voltage swing. The drivers are designed to drive large power MOSFETs and low-threshold, synchronous rectifiers found in communications infrastructure power supplies, motor controls and uninterruptible power supply systems.

The LM5110, housed in a tiny, thermally enhanced, 10-pin, 4mm x 4mm, LLP, chip-scale package, claims to be the industry’s first MOSFET driver offering split-supply capability to pull the gate below the source, so that low threshold MOSFETs are held in the OFF-state with design margin for drain to gate transients and threshold shift.

The driver features a wide supply voltage range from 3.5V to 14V, an integrated line under-voltage lockout circuit for safe and predictable operation, dual drivers that can be connected in parallel for twice the output current (10A peak current), ultra-fast switching speeds (14 nanosecond rise and fall times with 25 nanosecond propagation delay), three different versions (inverting, non-inverting and complementary), and an industrial temperature range from –40°C to +125°C.

Available now, the LM5110 is offered in either an SOIC-8 package or a 10-pin, surface-mount, LLP chip-scale package. It is priced at $0.65 each in 1,000 units.