Mitsubishi, ROHM, and Vishay Rollout New Power MOSFETs
In this month’s Power MOSFETs product recap we take a look at products from Mitsubishi Electric, ROHM and Vishay.
This recap showcases power MOSFETs components with different features and for different industries, from greener air conditioning to IoT applications.
SiC DIP Integrated Power Modules From Mitsubishi Electric
Designed to reduce carbon emissions caused by air conditioners, the PSF15S92F6-A from Mitsubishi Electric is an intelligent power module (IPM) with a rating of 15A/600V.
The component features a temperature sensor, as well as protection capabilities against supply under-voltage and short circuit events.
Image used courtesy of Mitsubishi Electric.
The power loss in the SiC module PSF15S92F6-A is approximately 1/3 of that in the Si module PSS15S92F6-AG, an older model with the same current and voltage rating of 15A/600V.
This translates into a reduced power consumption of more than 60% for future air conditioning designs.
You can read more information about the PSF15S92F6-A and Mitsubishi Electric’s SiC power devices at this link here.
High-Speed Ground Sense CMOS Op Amplifier From ROHM
The BD77501G is a single-ground sense CMOS op-amp featuring an operating voltage ranging from 7V to 15V.
Thanks to its high slew-rate and low-input bias current, the device is particularly suited for applications connected to sensor amplifiers, but also buffer application amplifiers, current monitoring amplifiers, and consumer electronics.
Image used courtesy of Rohm.
The BD77501G offers high open-loop voltage gain and an operating temperature range between -40°C and 85°C.
The new op-amp by ROHM also provides excellent EMI Immunity*2 (noise immunity) that limits variation to less than ±20mV (1/10th).
The feature enables high-speed signal amplification while allowing the component not to be affected by load capacitance or external noise when installed in the latter stages of sensor applications.
This ultimately improves reliability while also reducing design time.
MOSFET Half-Bridge Power Stage From Vishay Intertechnology
These new components from Vishay combine a high side TrenchFET MOSFET and low side SkyFET MOSFET with integrated Schottky diodes in a PowerPAIR 3.3 mm by 3.3 mm package.
Developed for power conversion in computing and telecom applications, the Siliconix SiZF300DT’ two MOSFETs in the device are internally connected in a half-bridge configuration.
Image used courtesy of Vishay Intertechnology.
The Channel 1 MOSFET offers maximum on-resistance of 4.5 mΩ at 10 V and 7.0 mΩ at 4.5 V, while the Channel 2 provides on-resistance of 1.84 mΩ at 10 V and 2.57 mΩ at 4.5 V.
Moreover, the component’s pin configuration and large PGND pad enhance thermal transfer, optimize the electrical path, and enable a simplified PCB layout.
SiZF300DT’s samples and production quantities are already available on the company’s website, with lead times of 12 weeks for large orders.
What MOSFETs have you seen rollout recently? Let us know in the comments below.