New Industry Products

Microsemi Announces New Power MOS 8 Punch Through Series IGBTs

May 31, 2008 by Jeff Shepard

Microsemi Corp. announced a new family of high speed Power MOS8® insulated gate bipolar transistors (IGBTs) featuring punch through technology in 600 and 900V devices. The new Power MOS8 IGBTs target applications that include solar inverters, high performance SMPS, and industrial equipment such as welders, battery chargers, and induction heaters.

The new Power MOS8 IGBT series exhibits low conduction losses VCE(ON), typ = 2.0V (600V) and 2.5V (900V), to increase overall circuit efficiency. Low switching losses are said to enable operation at frequencies over 100kHz – said to be approaching the performance of power MOSFETs but at lower cost.

Power MOS 8 IGBTs are available as single devices or packaged with DQ series fast, soft recovery diodes. Samples are available now. In 1000 piece quantities, prices range from $2.09 to $7.04 for discrete devices and $3.01 to $9.44 for Combi’s.