MagnaChip to Offer Vertical Bipolar Junction Transistor Type ESD Device

MagnaChip Semiconductor Corp. announced that it now offers a vertical BJT (Bipolar Junction Transistor) type ESD (Electro-Static Discharge) clamp to shrink products in 0.35um advanced BCD (Bipolar/CMOS/DMOS) technology with DTI (Deep Trench Isolation).

The vertical BJT ESD clamp, which is compatible with MagnaChip’s deep trench isolation process, was developed to support the industry’s first advanced BCD technology that enables DTI. The vertical BJT clamp features a snapback operating by BJT action and reduces the ESD clamp area by up to 84% when compared with conventional diode types.

T.J. Lee, Executive Vice President and General Manager of MagnaChip’s Corporate Engineering Division, commented, "We are very pleased to announce the introduction of our new ESD device developed for cost-effective and robust applications. Our offering of ESD devices such as the vertical BJT type ESD clamp is intended to enhance the competitiveness and design flexibility of our customer’s products. Our goal is to continue to develop highly differentiated and cost-effective ESD solutions to meet the increasing application-specific needs of our foundry customers."