IXYS Introduces Polar Generation Of P-Channel Power MOSFETs
IXYS Corp. announced the release of a new family of 100 to 500V PolarP™ P-Channel Power MOSFETs. This is a new generation of P-Channel MOSFET that complements the Polar N-Channel family of IXYS power MOSFETs.
These P-Channel MOSFETs are suitable for ‘high side’ switching where a simple drive circuit that is referenced to ground can be used. This is said to be more cost effective than using an N-Channel MOSFET. Furthermore it is said to allow for the design of a complementary power output stage, with a corresponding IXYS N-Channel MOSFET, for a power half bridge stage with a simple drive circuit.
These P-Channel devices are fabricated using IXYS’ Polar technology platform, reducing conduction losses by 30% and gate charge by 40%, and are thereby said to improve energy efficiency and power switching performance.
The voltage ratings of these new MOSFETs are 100, 150, 200 and 500V with current ratings ranging from 10 to 52A. Initial offerings include part numbers IXTH52P10P, IXTP36P15P, IXTH26P20P, and IXTH10P50 in various industry standard packages such as the TO-247, TO-3P, TO-220, and TO-263. In addition, versions will be offered in IXYS’ proprietary ISOPLUS™ packages providing UL approved 2500V isolation with superior thermal cycling and thermal performance. Higher current rated parts with additional package options will be forthcoming in the near future.
Common applications include high side switching, power solid state relays, push-pull amplifiers, CMOS high power amplifiers, dc choppers, high current regulators and high side switches in automotive and test equipments. The ruggedness of the PolarP™ Power MOSFETs makes them suitable for motor control and power cut-off switches or power SSRs for energy saving applications.