IXYS Introduces New High Voltage 2500 & 3000V BiMOSFETs
IXYS Corp. announces the expansion of its BiMOSFET™ product line portfolio with the release of its new High Voltage BiMOSFETs. These unique devices are tailored to enhance system performance in both the areas of energy efficiency and reliability in high-voltage, high-current commercial and industrial applications.
The HV BiMOSFETs feature blocking voltage capabilities of up to 3kV with corresponding collector current ratings of up to 130A and uniquely feature a "free" intrinsic body diode similar to that found in a conventional MOSFET. This new family will compliment IXYS’ other high voltage lines, finding applications in a diverse range of products such as ac switches, circuit breakers, radar pulse modulators, switch-mode power supplies, capacitor discharge circuits, and laser and X-Ray generation systems.
Parallel operation of this new class of devices can be easily achieved due to the positive voltage temperature coefficient of both of its saturation voltage Vce(sat) and the forward voltage drop of its intrinsic diode Vf. Furthermore, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for inductive load current during the turn-off transition of the device, suppressing high Ldi/dt voltage transients from inflicting damage on to the device.
According to IXYS, the HV BiMOSFETs are well suited for high-voltage, high current applications where traditional MOSFETs are typically utilized in series-parallel strings to overcome their voltage current and on-state limitations. Such device consolidation reduces the number of power devices and associated complex drive components, resulting in a much simpler system design, with improved reliability, and a lower system cost.
The HV BiMOSFETs are available in various standard packages, including the surface mount TO-268 and the leaded TO-247, TO-264, and PLUS247. These devices are also available in IXYS’ proprietary ISOPLUS™ packaging, offering what is described as high isolation capability (up to 3000V) and superior thermal performance.
