IXYS Introduces New Generation Of Trench Power MOSFETs

IXYS Corp. announced the release of the new TrenchT2 Power MOSFET family with the voltage ratings of 40 to 75V designed and optimized to meet the high power, thermal and electrical performance of energy and power management systems with low energy losses.

Utilizing IXYS’ advanced trench technology, these rugged devices come with low on state resistances, Rds(on), typically less than 5mΩ. This technology platform enables IXYS to insert die with increased load currents into smaller packages while enhancing device efficiency and performance. It is claimed that these MOSFETs provide very low conduction and switching losses, which are crucial factors to achieve higher operating efficiencies. They are also rugged in unclamped inductive switching applications and are packaged in low inductance housings to improve device high frequency switching.

TrenchT2 Power MOSFETs are available in several industry standard packages with voltage ratings from 40 to 75V. They will also be offered in IXYS’ ISOPLUS isolated packages that offer superior thermal cycling performance with identical footprints as the standard TO220 or TO247 un-isolated packages.

IXYS TrenchT2 Power MOSFETs provide designers with high current rating solutions for improved efficiency in automotive electronics, electrical vehicles and power management systems. Common applications include battery chargers, synchronous rectification, dc-dc converters, power train management, off-line SMPS and UPS, primary switches for 24 and 48V systems, distributed power architecture, power amplifiers and brushless motor control.