IR Presents New RAD-Hard MOSFET Rectifiers

International Rectifier Corp. (IR, El Segundo, CA) introduced two space-saving devices for high-reliability (hi-rel) power-management circuits in spacecraft, military, oil exploration and undersea telecommunications applications. The new radiation-hardened (RAD-Hard) synchronous MOSFET rectifiers combine a RAD-Hard MOSFET and a high-efficiency Schottky rectifier into one package. The new devices are designed to fill the demand for small and efficient devices in space-level power-management circuits.

IR's syncFET/Schottky diode co-pack devices shrink the package count by one. Co-packaging also decreases the MOSFET-to-Schottky diode wiring inductance in high-frequency applications. The new devices are packaged in the hermetically sealed, surface-mount, SMD-2 package, and can be ordered on a carrier to facilitate assembly integration.

The new IRHSNA57Z60 and IRHSNA57064 are now available. Pricing is $278.74 each in 500-unit quantities.