Infineon Extends Power Conversion MOSFET Portfolio
Infineon Technologies AG expanded the application scope of its OptiMOS™ power MOSFET portfolio, introducing a family of 200 and 250V devices well-suited for synchronous rectification in 48V systems, dc-dc converters, uninterruptable power supplies (UPS) and inverters for dc motor drives. Featuring the lowest Figure of Merit (FOM) compared to alternative devices, OptiMOS 200 and 250V technology slash conduction losses in system designs by one-half.
Engineers that until now designed 48V power supplies using a diode-based rectification stage in the SMPS (switched mode power supply) now have an alternative that enables overall efficiency levels exceeding 95%, which is 2% higher than typical today and translates to 30% lower power losses. This fulfills growing demands for higher efficiency in telecommunication networking markets, where business customers are seeking economic and market positioning advantages based on "green" technology infrastructure.
"Infineon’s OptiMOS technology consistently sets the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics that enable reduced power losses and improved overall efficiency," said Andreas Urschitz, Vice President and General Manager, Industrial and Multimarket Division at Infineon Technologies. "Our commitment to continuous improvement in manufacturing process and packaging allows us to extend the product family into a higher voltage range, in line with our company-wide strategy to address the energy efficiency challenges facing modern society."
OptiMOS 200V and 250V family devices feature R DS(on) (on-state resistance) 50% lower than alternative devices, which translates to the lowest possible power losses in high current applications. The industry’s lowest gate charge (Qg) – up to 35% less than alternatives – contributes to low losses and fast switching in switched mode applications like isolated dc-dc converters for telecom applications. Additionally, the device family allows system cost improvement through reduced device paralleling; the ability to use smaller heat sinks as a result of the low on-state resistance; and a fast and low complexity design process due to optimized switching behavior.
The outstanding characteristics of the OptiMOS 200V and 250V family allow use of a slim SuperSO8 package (5 x 6 x 1mm) for applications that previously required bulky D³ PAK devices (9 x 10 x 4.5mm). Going from D ³ PAK to SuperSO8 reduces the power semiconductor space requirement by more than 90% and enables higher power density systems. Additionally, using leadless packages like SuperSO8 provides ideal switching behavior and high efficiency levels.
Available immediately, the OptiMOS 200 and 250V device family includes components in TO-220, TO-262, D³ PAK and SuperSO8 packages in R DS(on) classes 10.7, 20, 32 and 60mΩ. For small quantity (10k units), pricing begins at 1.2 USD for 200V and 1.4 USD for 250V.