New Industry Products

Hitachi Introduces New HZN6.8ZMFA Surge-Absorption Zener Diode

August 13, 2001 by Jeff Shepard

Hitachi Asia Ltd. (Singapore) introduced the new HZN6.8ZMFA surge-absorption zener diodes, which are designed to protect the internal circuitry of small portable equipment, such as mobile phones and PDAs, from external surge voltages. Housed in an ultra-thin VSON-5 package, which measures 1.6mm x 1.6mm, the diode is said to offer about 40-percent board-space savings.

The device operates from 6.47V to 7V (5mA, 40ms pulse), exhibits a capacitance of 25pF (maximum) at a 0V rating, or 10pF (maximum) at a 5V rating, and offers a high static-surge rating of 25kV, meeting the IEC61000-4-2 standard. Specified at 25 degrees C, power dissipation is rated at 150mW. Reverse current is 0.5µA. Dynamic resistance is 30 ohms (5mA).

Other absolute maximum ratings include a junction temperature of 150 degrees C, and a storage temperature range of -55 degrees C to 150 degrees C.