Hi-Sincerity Micro Intros H07N60AF Series FETs

Hi-Sincerity Microelectronics Corp. (Taiwan) released its H07N60AF Series of n-channel, power field-effect transistors (FETs) in TO-220FP packaging. The company claims that an advanced termination scheme is used to provide enhanced voltage-blocking capability without degrading performance over time.

The FETs are designed to withstand high-energy conditions in avalanche and commutation modes, and offer a drain-to-source diode with a fast recovery time. Suitable for use in high-voltage, high-speed, switching applications, including power supplies, converters and pulse-width modulation motor controllers, the devices feature a drain-to-current (continuous) of 7A, a drain-to-current (pulsed) of 18A, gate-to-source voltage (continue) of ±20V, and gate-to-source voltage (non-repetitive) of ±40V.

Other specifications include total power of 125W, de-rate of about 25°C of 1W/°C, and an operating temperature range and a storage temperature range of -55°C to +150°C.