New Industry Products

Freescale Intros MRF6P3300H LDMOS RF Transistor

April 18, 2005 by Jeff Shepard

Freescale Semiconductor Inc. (Austin, TX) introduced its new MRF6P3300H transistor, which leverages the company’s sixth-generation, high-voltage (HV6) laterally diffused, metal-oxide semiconductor (LDMOS) technology. The LDMOS device delivers RF performance while enhancing the operating efficiency and reliability of power amplifiers and transmitters.

The 300 W MRF6P3300H RF transistor allows power amplifier manufacturers to reduce system-level costs because fewer RF transistors are needed to achieve a given power target. According to a Freescale analysis of a typical 5 kW digital television base station, a power amplifier with multiple MRF6P3300H devices can help reduce annual operating costs by up to $5,200. The MRF6P3300H accommodates both digital and analog broadcast standards in the 470 MHz to 860 MHz range, using a 32 V power source common in television transmitters. The MRF6P3300H delivers 57.5% efficiency and 19 dB power gain when operating at 860 MHz and at 300 W CW.

The MRF6P3300H RF transistor is sampling now, and production is planned for the late second quarter.